DS1345WP-100IND+

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	34-PowerCap™ Module
Supplier Device Package:	34-PowerCap Module
Base Part Number:	DS1345W

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Introduction

DS1345WP-100IND+ is a memory that is widely used in a variety of applications, particularly in embedded systems. It is a non-volatile memory that is highly versatile, robust, and reliable. This memory is based on a floating gate cell structure, which allows for efficient data storage and retrieval. Its non-volatile nature makes it particularly suitable for embedded applications that require long-term memory storage.

Application Field

DS1345WP-100IND+ memory is widely used in a variety of applications, including automotive, industrial, medical, and consumer electronics. In automotive applications, DS1345WP-100IND+ memory is used to store vehicle diagnostic and operational data, as well as to manage powertrain and other key systems. In industrial applications, DS1345WP-100IND+ memory is used for controller programming, data logging, and data acquisition. It is also used for AI-based control systems, machine control and monitoring, HMI systems, and safety systems.In medical applications, DS1345WP-100IND+ memory is used to store patient data, as well as medical device and instrument settings. It is also used to store data related to automatic drug delivery systems.In consumer electronics, DS1345WP-100IND+ memory is used to store user data, settings, and preferences, as well as to manage power management, audio settings, and display settings.

Working Principle

The working principle of DS1345WP-100IND+ memory is based on the non-volatile, floating gate cell structure. This structure allows for efficient data storage and retrieval, and its non-volatile nature makes it particularly suitable for embedded applications that require long-term memory storage.In order to write data to the memory, a voltage pulse is applied to a capacitor in the memory cell, which causes charge carriers to flow from the capacitor to the floating gate. To read data from the memory, a voltage is applied to the memory cell, which causes charge carriers in the floating gate to move to either the capacitor or the drain, depending on the stored data bit. The advantages of this memory architecture include its improved efficiency, high speed, and low power consumption. Additionally, it is highly resistant to temperature changes, shock, and vibration.

Conclusion

DS1345WP-100IND+ memory is a non-volatile memory that is widely used in a variety of applications. Its non-volatile nature makes it particularly suitable for embedded applications that require long-term memory storage. It is based on a floating gate cell structure, which allows for efficient data storage and retrieval. It is also highly resistant to temperature changes, shock, and vibration. It is used in automotive, industrial, medical, and consumer electronics applications, and is highly versatile, robust, and reliable.

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