Allicdata Part #: | DS1345YL-70IND-ND |
Manufacturer Part#: |
DS1345YL-70IND |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 1M PARALLEL 34LPM |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8... |
DataSheet: | DS1345YL-70IND Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-LPM |
Supplier Device Package: | 34-LPM |
Base Part Number: | DS1345Y |
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The DS1345YL-70IND is a type of memory used in the world of computers, data centers, and other applications. More specifically, it is a 128-bit non-volatile ferroelectric random access memory (NVRAM). It is designed to preserve data even in a power failure. This makes it a desirable form of memory for a variety of applications. In this article, we will discuss the application fields and working principle behind the DS1345YL-70IND.
Application Fields
The DS1345YL-70IND is an ideal memory solution for applications that require data preservation and stability. This makes it suitable for industrial, consumer, military and aerospace applications. In industrial applications, the DS1345YL-70IND can be used in an environment where power outages are common, as it will maintain its stored data. In consumer applications, this type of memory can be used to store data such as game state, remote control settings, or audio/video content.
The DS1345YL-70IND is also commonly used in the aerospace and defense sector. It is capable of withstanding severe vibration and shock, making it a good choice for satellite operations and other mission-critical applications. Furthermore, it can withstand radiation and is designed for long-term use in hostile environments, making it an ideal choice for spacecraft, missiles, and other mission-critical applications in extreme environments.
Working Principle
The primary function of the DS1345YL-70IND is to store non-volatile data. This is accomplished by the use of ferroelectric technology. Ferroelectric materials contain a spontaneous electric polarization, which allows them to retain their polarization state even when the power is removed. When the memory cell is written to, its polarization state is changed in order to store data.
The DS1345YL-70IND contains 128-bit cells arranged in 8 arrays. Each array contains 16 bits and is organized in 16 columns and 128 rows. This organization allows for fast access of data, as the data can be read and written to quickly.
In order to access the memory, an external processor or a dedicated controller is used to read and write the data. The processor or controller transmits the information to the memory through 4 x 8-bit I/O ports. The data is then stored on the memory cells via electrostatic memory cells.
The DS1345YL-70IND is designed for industrial and consumer applications, which require data retention, stability and reliability. With its 128-bit cells and non-volatile ferroelectric technology, it is capable of providing data retention even in a power failure. The DS1345YL-70IND is a simple, yet powerful memory solution that can provide the highest level of data retention and stability.
The specific data is subject to PDF, and the above content is for reference
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