DS1350YL-100

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Memory: DS1350YL-100 Application Field and Working Principle

DS1350YL-100 is a high-speed static random access memory (SRAM) for high-performance applications. It is designed for use in system-on-a-chip (SOC) designs, such as portable consumer electronics, data communications and other embedded applications that require high memory capacity and low power consumption.

DS1350YL-100 uses a high-speed 0.18µm CMOS process and performs at an access time of 55ns. Additionally, the DS1350YL-100 offers the industry’s highest density at 32Mb, making it the ideal solution for systems requiring large amounts of high-speed SRAM data storage. It also offers low power consumption, with 4.35 mA (maximum) data retention current at 55°C.

The main application for the DS1350YL-100 is the implementation of SoC designs, including Network Packet Processors and 3G mobile phones. It can also be used in various computer system designs, such as high-end graphics systems and Embedded Systems. The device offers a high density of 32Mb in a 0.18µm process node, making it perfect for designs where board space is a major consideration.

The DS1350YL-100 incorporates a Multi-Byte DataBus, allowing multiple 16-bit bus cycles per clock cycle. This makes the device suitable for data-bus intensive applications, such as image processing and communications. Additionally, the device includes Chip Select and Output Enable (OE) features, allowing the designer to combine several memory functions on a single device.

DS1350YL-100s working principle is based on the idea that SRAM works by storing electric charges on an array of capacitors. To read from or write to memory locations, the charge on the capacitor must first be determined. To accomplish this, an array of pass transistors, connected to the row and column lines, is required. For each memory location, one transistor is connected to the read and write ports. By applying different voltages to the row and column lines, the state of a memory cell can be determined.

When the device is powered on, the OE signal is activated, causing the pass transistors to be turned on, allowing data to be read from and written to the memory locations. During a read cycle, data is transferred to the output data bus. For a write cycle, the data is transferred to the memory locations.

To ensure reliable operation, the DS1350YL-100 incorporates power-on and power-off circuitry. This circuitry helps to detect when the device is powered off, preventing accidental data overwrite. Additionally, the device includes ECC (error correction code) allowing it to detect and correct single-bit errors.

The DS1350YL-100 offers high-speed performance along with the highest density of 32Mb in its 0.18µm process node. Its Multi-Bit Data Bus design allows for multiple 16-bit bus cycles per clock cycle and its ECC circuitry allows it to detect and correct single-bit errors. With such high performance and low power consumption, the DS1350YL-100 is the perfect solution for high embodiment applications such as image processing and communications.

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