DSA2001R0L Allicdata Electronics
Allicdata Part #:

DSA2001R0LTR-ND

Manufacturer Part#:

DSA2001R0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 0.1A MINI3
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 150MHz 200m...
DataSheet: DSA2001R0L datasheetDSA2001R0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Base Part Number: DSA2001
Description

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The DSA2001R0L is a high-performance, low power Bipolar Junction Transistor (BJT) manufactured by ROHM Semiconductor. It has been specifically designed for use in medium current, low-voltage digital applications. The DSA2001R0L has a collector current capability of 1.6A and a collector-emitter voltage of 5V. It is a single-transistor device with a PNP BJT structure.

The DSA2001R0L is designed to provide accurate voltage regulation and fast switching performance. It offers excellent power supply rejection, allowing it to be used in harsh EMC environments. It is designed to operate in temperatures of up to +150°C and has a wide operating speed range of up to 125MHz.

The DSA2001R0L is constructed using a multi-layer ceramic substrate, which allows for high-speed operation in a very small package. The wide-bandgap BJT structure provides for excellent electron mobility, low on-state resistance, and good thermal resistance. This makes it suitable for use in high-speed switching applications.

The DSA2001R0L is primarily used in digital applications such as interface circuitry, power supply switching, and DC to DC converters. Additionally, its low power consumption, high accuracy, and high-speed response make it suitable for PCM modulation and other digital signal processing applications.

The DSA2001R0L is designed to operate in either an open-collector (OC) or open-drain (OD) configuration. In an OC configuration, the collector is connected to VCC, while the emitter is open. This allows current to flow from the emitter to the collector when the input signal is at the HIGH logic state. In an OD configuration, the collector is open, while the emitter is connected to VCC. This allows current to flow from the collector to the emitter when the input signal is at the LOW logic state.

The DSA2001R0L offers good noise immunity thanks to its built-in EMC filter. It also has a very low leakage current and is able to operate over a wide temperature range from -55°C to +150°C. The device is also available in a wide variety of packages, including SO, TO-252, and TO-220.

In summary, the DSA2001R0L is a high-performance, low power BJT designed specifically for use in medium current, low voltage digital applications. Its high-speed response, wide temperature range, and low power consumption make it suitable for a variety of applications. It is available in a wide range of packages and is ideal for digital signal processing, power supply switching, and interface circuitry.

The specific data is subject to PDF, and the above content is for reference

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