DSA2001S0L Discrete Semiconductor Products |
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Allicdata Part #: | DSA2001S0LTR-ND |
Manufacturer Part#: |
DSA2001S0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 50V 0.1A MINI3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 150MHz 200m... |
DataSheet: | DSA2001S0L Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 290 @ 2mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G3-B |
Base Part Number: | DSA2001 |
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Transistors - Bipolar (BJT) - Single - DSA2001S0L Application Field and Working Principle
The DSA2001S0L application field is a transistor-based device. It is a single bipolar junction transistor (BJT) that is ideal for use in wide range of applications, such as switching and amplification.
The working principle of the DSA2001S0L is based on the BJT. A BJT is a three-layer semiconductor device that consists of two p-n junctions and a small region between them. In operation, the transistor acts as a switch, allowing electrons to pass through, when the base current is applied.
The single bipolar junction transistor consists of two semiconductor materials, namely P type and N type. The similarities between the two materials are similar in terms of the density and conductivity. The key difference lies in their ability to effectively trap and transport electrons or holes from one material to another. The P type material consists of a higher density and lower conductivity, whereas the N type material has lower density and higher conductivity.
The DSA2001S0L offers excellent performance characteristics such as low noise, high speed, and wide punch-through capability. Additionally, this device has good temperature stability and low cutoff distortion. This makes the DSA2001S0L ideal for a wide range of applications including linear, digital, and switching applications.
When it comes to the operational characteristics of the DSA2001S0L, the two most important parameters are the emitter saturation voltage (Vce(sat)) and the gain-bandwidth product (fT). The Vce(sat) is the voltage at which the current through the emitter junction exceeds the current generated by the base and gets saturated. The fT is an important parameter in many electronic circuits, as it is an indicator of how well the device amplifies a rising frequency signal.
Finally, the DSA2001S0L is a highly reliable device, with good radiation tolerance and long lifespan. This makes it an ideal choice for many applications and industries. Furthermore, due to its high-performance features, the transistor is widely used in automotive components, industrial systems, home electronics, and other high-tech applications.
The specific data is subject to PDF, and the above content is for reference
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