
Allicdata Part #: | DSA2002S0LTR-ND |
Manufacturer Part#: |
DSA2002S0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 50V 0.5A MINI3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 130MHz 200m... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 150mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G3-B-B |
Base Part Number: | DSA2002 |
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DSA2002S0L Application Field and Working Principle
The DSA2002S0L is a single bipolar junction transistor (BJT) device. It is used for a variety of applications, including power amplifier circuits, high-gain frequency circuits, and low-noise amplifier circuits. This device features a low saturation voltage, high gain, high current gain, and low power consumption.
Description of Working Principle
The DSA2002S0L is a three-terminal device in which current flows from the emitter to the base and then to the collector. The base-emitter junction is always forward biased and the base-collector junction is reverse biased. The base region is very thin, allowing a high current gain. The collector region has more diffusion than the emitter region, allowing the current gain to be high when the base region is forward biased.
The transistor has two different modes of operation: the active mode and the saturation mode. In the active mode, the base-emitter junction is forward biased, and the collector current, Ic, is limited only by the external circuit components. This mode is used in amplifier circuits and the current gain is usually in the range of 50 to 250. In the saturation mode, the base-emitter junction is reverse biased and the collector current is limited by the saturation voltage, Vce(sat). This mode is used for power amplifiers, as the saturation voltage is typically in the range of 0.2 to 0.4 volts.
Applications
The DSA2002S0L is ideal for use in amplifier circuits and power amplifiers. It can be used in high-gain frequency circuits, low-noise amplifier circuits, and even RF amplifiers. This device is also commonly used in low-power applications, such as low-current audio amplifiers. In addition, it can be used in analog circuits, such as linear voltage regulators and LED drivers.
The DSA2002S0L is also often used in computer networks, where it is used as a switch to enable or disable a particular circuit. It is also an essential component in many telecom systems, where it is used to switch between different data rates. This device can also be used to build circuit protection devices, as it can be used to directly control the flow of current.
The DSA2002S0L is also ideal for use in low-voltage applications. It can be used in battery-powered devices, where its low power consumption ensures long battery life. The low saturation voltage also ensures that the device operates at the most efficient level, helping to conserve battery power.
Conclusion
The DSA2002S0L is a single bipolar junction transistor (BJT) device. It has a low saturation voltage, high gain, high current gain, and low power consumption, making it ideal for a variety of applications, including power amplifiers, high-gain frequency circuits, and low-noise amplifier circuits. This device can also be used in battery-powered devices, where its low power consumption ensures long battery life. The DSA2002S0L can be used to switch between different data rates, build circuit protection devices, and control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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