| Allicdata Part #: | DSA200200LTR-ND |
| Manufacturer Part#: |
DSA200200L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS PNP 50V 0.5A MINI3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 130MHz 200m... |
| DataSheet: |  DSA200200L Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 150mA, 10V |
| Power - Max: | 200mW |
| Frequency - Transition: | 130MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | Mini3-G3-B-B |
| Base Part Number: | DSA2002 |
Description
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<html><head><title>Transistors - Bipolar (BJT) - Single</title></head><body><h2>DSA200200L Application Field and Working Principle</h2><p>The DSA200200L transistors are the perfect choice for high-power and high-temperature applications. They are designed to operate in temperatures up to 200°C and can handle voltage levels up to 200V. The DSA200200L is a single-transistor device with two collector bases and two emitter bases. It is commonly used in applications such as radio frequency (RF) amplifiers, power amplifiers, switches, and linear power supplies. This article will discuss the application field and working principle of the DSA200200L.</p><h3>Application Field</h3><p>The DSA200200L transistors have a wide range of applications in industrial, automotive, communications, and consumer electronics. They can be used for amplifying signals in any of these fields. They are also suitable for applications such as switching and speed control.</p><h3>Working Principle</h3><p>The DSA200200L transistors are based on a PNPN structure. This means that the device is made up of four layers of semi-conducting material (from the emitter to the collector, the layers are referred to as P-type, N-type, P-type, and N-type). The action of the transistor is based on current amplification and is achieved by controlling the potential difference between the emitter and the base.</p><p>When a small current is applied to the base of the DSA200200L, it allows the majority carriers in the P-N junction to be injected into the base region. This causes the N-P-N junction to become forward-biased, resulting in a high concentration of majority carriers in the collector. This sudden increase in the majority carriers in the collector causes the collector current to increase greatly. This current amplification is the signal amplification achieved through the transistor.</p><p>The DSA200200L transistors are highly reliable and are used in both commercial and military applications. They are able to handle high temperatures, making them ideal for use in extreme environment. They feature low power gain and low collector-emitter saturation voltage, making them ideal for high-frequency applications.</p><h3>Conclusion</h3><p>The DSA200200L transistors are versatile single-transistor devices that are suited for high-power, high-temperature and high-frequency applications. Their advanced design and extreme temperature tolerance makes them an ideal solution for any application.</p></body></html>The specific data is subject to PDF, and the above content is for reference
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