| Allicdata Part #: | DSS5220T-13-ND |
| Manufacturer Part#: |
DSS5220T-13 |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | SS LOW SAT TRANSISTOR SOT23 T&R |
| More Detail: | Bipolar (BJT) Transistor PNP 20V 2A 100MHz 1.2W Su... |
| DataSheet: | DSS5220T-13 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.05371 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 20V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100mA, 2A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 225 @ 500mA, 2V |
| Power - Max: | 1.2W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74A, SOT-753 |
| Supplier Device Package: | SOT-23 |
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The DSS5220T-13 is a single bipolar junction transistor (BJT) that is designed to be used in a wide range of applications. It is typically used in high speed and high frequency applications, such as in microwave transmitters, high power switching circuits, and amplifiers. It is also suitable for use in high power supply linear applications.
In most cases, the DSS5220T-13 operates at a voltage of up to 45V, and can handle a current of up to 10 amps. Its maximum frequency of operation is 40 GHz, making it ideal for high speed applications. The device also has a high plateau region, allowing for low distortion and high performance.
The DSS5220T-13 is designed to provide superior performance over traditional BJTs in high speed and high frequency applications. It offers excellent linear behavior and an efficient power consumption compared to other transistors. The device also offers a high switching speed and stability, so that it can be used in high current and high voltage applications. Additionally, it is designed to offer excellent immunity to EMI and noise, making it suitable for use in high frequency and high power circuits.
The working principle of the DSS5220T-13 is that when a voltage is applied across the device, electrons will flow from the emitter to the collector. This flow is controlled by the base current, which is adjusted by the voltage applied to it. As the current increases, the amount of electrons that are collected in the collector will also increase, allowing for increased power output.
The DSS5220T-13 is typically used in high frequency and high speed applications, such as in microwave transmitters, high power switching circuits, and amplifiers. It is also suitable for use in high power supply linear applications. The device offers superior performance over traditional BJTs in these applications, providing excellent linear behavior and efficient power consumption. The device also offers a high switching speed, excellent immunity to EMI and noise, and high stability.
The specific data is subject to PDF, and the above content is for reference
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| DSS5240T-7 | Diodes Incor... | -- | 1000 | TRANS PNP 40V 2A SOT-23Bi... |
| DSS5240V-7 | Diodes Incor... | -- | 6000 | TRANS PNP 40V 1.8A SOT-56... |
| DSS5140V-7 | Diodes Incor... | -- | 3000 | TRANS PNP 40V 1A SOT-563B... |
| DSS5160T-7 | Diodes Incor... | -- | 1000 | TRANS PNP 60V 1A SOT23Bip... |
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| DSS5220T-7 | Diodes Incor... | 0.07 $ | 1000 | SS LOW SAT TRANSISTOR SOT... |
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| DSS5160FDB-7 | Diodes Incor... | 0.16 $ | 3000 | TRANS 2-PNP 1A 60V U-DFN2... |
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DSS5220T-13 Datasheet/PDF