DSS5220T-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 100mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	225 @ 500mA, 2V
Power - Max:	1.2W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	SOT-23

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DSS5220T-7 is a transistor that belongs to the category of single Bipolar Junction Transistors (BJT). It is mainly used in power management circuits, low noise amplifiers, and switching applications. In addition, it can also be used as an amplifier in remote sensing and RF modules.The DSS5220T-7 is a NPN silicon device with a maximum collector-emitter voltage rating of 80V. It has a low collector-emitter voltage saturation of 270 mV at 200 mA. It can support a wide range of collector currents from a few milliamps up to 200 mA. The power dissipation capability of this device is up to 230 mW. The device has an excellent thermal resistance from junction to case and from junction to ambient.The DSS5220T-7 can work in a wide range of ambient temperatures from -55°C to +150°C. The device has an on-state resistance at a collector-emitter voltage of 4V and a collector current of 200mA of 1.7Ω. The device is also equipped with a built-in ESD protection of up to 5KV.At the most basic level, transistors work by controlling the flow of electrical current signals between two terminals, called the collector and the emitter. When a small current is applied to the base terminal, the current flow between the collector and the emitter will be amplified.In the case of the DSS5220T-7, the collector terminal is connected to the power supply, and the emitter is mostly connected to the load. When a small base current is applied to the transistor, a large current will flow through the collector and emitter, effectively amplifying the signal.The working principle of the DSS5220T-7 revolves around the interaction of current and voltage with the collector and emitter terminals. When a voltage is applied across the collector and emitter, an electric field will be generated. This electric field will either attract or repel electrons depending on the collector current. This process is what allows the transistor to control the flow of current when a small amount of current is applied to the base.Much of this process is handled by the device itself as the two diodes within the device provide the transistor with the necessary current control. These diodes act as a current source, releasing electrons to the collector or accepting electrons from the emitter.Overall, the DSS5220T-7 provides an effective way to switch and amplify small signals into large currents. It is very versatile and can be used in a wide range of applications from power management to RF modules. The device is also equipped with excellent thermal properties and ESD protection, making it a reliable choice for many design applications.

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