DSS5540X-13 Allicdata Electronics
Allicdata Part #:

DSS5540X-13DITR-ND

Manufacturer Part#:

DSS5540X-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 40V 4A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 40V 4A 60MHz 900mW Su...
DataSheet: DSS5540X-13 datasheetDSS5540X-13 Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 900mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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The DSS5540X-13 is a single bipolar junction transistor (BJT). It is a type of three-terminal semiconductor device with current gain properties. Generally, it consists of a base, collector, and emitter. The device can be used as an amplifier, oscillator, switch, or logical operator. It is typically used in power supplies, relay drivers, RF circuits, and high-frequency switching configurations.

One of the main applications of the DSS5540X-13 is in power electronics. This type of transistor is suitable for thermal cycling, because of its outstanding thermal properties. It provides fast switching, which is important in controlling the power delivery of a circuit. In addition, it has excellent current-handling capability, which makes it suitable for applications such as motor-control inverters and motor-driver circuits.

Another important application of the DSS5540X-13 is in high-frequency switching. The transistor can be used as a switch for signal switching applications, such as for radio-frequency (RF) signal conditioning, signal-switching circuits, and switching power supplies. The superior noise immunity and fast switching speed of this type of transistor make it ideal for high-frequency signal-switching applications.

The working principle of the DSS5540X-13 is based on the principle of current gain. It has three terminals, the base, collector, and emitter. The base current is amplified and forwarded to the collector, while the emitter allows the amplified current to pass through the transistor and flow into the external circuit. The emitter voltage is typically reversed biased by the collector-to-emitter voltage. The amount of current that is amplified is proportional to the ratio of the base current to the collector current. This phenomenon is known as the current gain of the transistor.

The DSS5540X-13 is also a reliable device, with features such as short-circuit protection, over-temperature protection, high reliability, and low power consumption. It is designed for operations in the temperature range of -55⁰C to +150⁰C and is able to operate at the maximum current specified by its maximum rating. Its current gain is also very reliable and can easily be adjusted by altering the base current. Furthermore, it exhibits excellent thermal and frequency characteristics, making it ideal for use in applications such as switching and RF circuits.

In conclusion, the DSS5540X-13 is a single bipolar junction transistor that is used in many applications. This type of transistor is typically used in power electronics, high-frequency switching, and RF signal conditioning. The principles of its operation are based on current gain and its three terminals, the base, collector, and emitter. It also offers excellent thermal and frequency characteristics, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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