DSS5240TQ-7 Allicdata Electronics

DSS5240TQ-7 Discrete Semiconductor Products

Allicdata Part #:

DSS5240TQ-7DITR-ND

Manufacturer Part#:

DSS5240TQ-7

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 40V 2A SOT23
More Detail: Bipolar (BJT) Transistor PNP 40V 2A 100MHz 730mW S...
DataSheet: DSS5240TQ-7 datasheetDSS5240TQ-7 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.07318
6000 +: $ 0.06875
15000 +: $ 0.06431
30000 +: $ 0.05899
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Power - Max: 730mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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A DSS5240TQ-7 transistor is a single bipolar junction transistor (BJT). It is a three-terminal device consisting of a base, emitter and collector. This type of transistor is a very versatile component that can be used in a variety of applications, ranging from low-level switching and amplification of signals in audio circuitry, to more powerful applications such as medium frequency switching and light illumination. As this component is part of the DS series of transistors, they are particularly suitable for use in high-speed differential pairs applications.

The DSS5240TQ-7 uses a metal oxide semiconductor field-effect transistor (MOSFET) as its collector and the device is rated at 350W. It has an 8.5V transistor breakdown voltage and a 2.5V maximum collector-emitter voltage. It has an operating voltage range of 3V to 23V and a current gain of 35 at a collector current of 10mA. This type of transistor also has a high output power rating of 50W.

The working principle behind the DSS5240TQ-7 is based on the fact that when a voltage is applied to the base-emitter junction, a small current will flow through the base-collector junction. This current is amplified by the current gain, which is indicated by the h parameter. This phenomenon is known as minority carrier injection and is the primary operating principle behind the DSS5240TQ-7.

One of the main applications of the DSS5240TQ-7 is in audio circuits, where it can be used to increase the gain of audio signals. It can also be used in automatic gain control circuits, where it can increase the gain of weak signals. In addition, this type of transistor is often used in switching applications such as high-speed logic circuits and DC-DC converters. It is also widely used in power management circuits, where it can be used to switch and control various loads in a system.

The DSS5240TQ-7 has a maximum operating temperature of 85°C and a storage temperature range of -40°C to +85°C. It is a robust transistor, capable of operating at high frequencies and it has the ability to withstand high voltages and current levels. This makes it an ideal choice for a wide variety of applications.

In conclusion, the DSS5240TQ-7 is a single bipolar junction transistor (BJT) designed for use in a wide range of applications. It has a wide range of rated current and voltage gains and a high output power rating. It is suitable for use in audio circuits, switching applications and DC-DC converters, and for power management in general. Its versatility, robustness and reliability make it an ideal choice for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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