DTC114EKAT146 Allicdata Electronics
Allicdata Part #:

DTC114EKAT146TR-ND

Manufacturer Part#:

DTC114EKAT146

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC114EKAT146 datasheetDTC114EKAT146 Datasheet/PDF
Quantity: 309000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.02000
10 +: $ 0.01940
100 +: $ 0.01900
1000 +: $ 0.01860
10000 +: $ 0.01800
Stock 309000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Base Part Number: DTC114
Description

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DTC114EKAT146 Application Field and Working Principle

The DTC114EKAT146 is a single, pre-biased bipolar junction transistor (BJT). BJTs are three-terminal semiconductor devices which are components of many electronic circuits. This transistor combines both low voltage and high current capabilities in a single package and is widely used in many types of electronic appliances.

The DTC114EKAT146 is comprised of two components attached on a common substrate. The two components are an NPN (N-type-P-type-N-type) and a PNP (P-type-N-type-P-type) transistor. The common substrate refers to the material used to create the semiconductor junction between the two components.

The NPN and PNP transistors form a two-stage differential amplifier, with the two devices behaving independently of each other. The NPN transistor is the amplifier\'s input stage, while the PNP is the output stage. The two transistors are connected such that the output of the NPN provides a complete opposite-polarity signal to that of the PNP. This ensures that the output of the NPN and the PNP stages are in opposite polarity.

The DTC114EKAT146 is designed to operate from 4 volts to 16 volts, with a maximum collector current of 1.5 amperes. Although it is designed for use with other components, it can also be used as a stand-alone device. It has low power loss, low power noise, and low distortion. It is also ideal for audio applications as it can provide low distortion amplification of audio signals.

The maximum continuous collector current of the DTC114EKAT146 is 1.5 amperes and its maximum peak-dynamic collector current is 2 amperes. Its maximum power dissipation is 2.5 watts, and its typical collector-emitter saturation voltage is 0.2 volts. It has a high DC current gain of 100 or more.

The DTC114EKAT146 is a pre-biased transistor, meaning that the base-emitter junction is reverse-biased. This feature is useful in many applications because it allows current to flow, even when the input signal is at a low level. This reduces power consumption and ensures that the transistor does not saturate.

The DTC114EKAT146 is ideal for use in audio applications, but can also be used in many other applications such as DC/DC converters, active pull-up circuits, signal switching, and driving high-current relays or electromagnetic valves. The device is very popular in automotive applications due to its low voltage and high current capability, as well as its low distortion and low power noise.

In summary, the DTC114EKAT146 is a single, pre-biased NPN-PNP bipolar junction transistor. It has low power loss and low power noise, making it ideal for audio applications. It has a high DC current gain, and its maximum continuous collector current is 1.5 amperes. It is popular in automotive applications due its low voltage and high current capability.

The specific data is subject to PDF, and the above content is for reference

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