DTC143EET1 Allicdata Electronics
Allicdata Part #:

DTC143EET1-ND

Manufacturer Part#:

DTC143EET1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143EET1 datasheetDTC143EET1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DTC143
Description

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The DTC143EET1 is a single pre-biased bipolar junction transistor (BJT) manufactured by Diodes Inc. It is a small signal low frequency complementary metal-oxide semi-conductor (CMOS) device. The DTC143EET1 is ideally suited for applications like amplification and switching, general RF and fast switching applications as well.The DTC143EET1 is a three-pin device with an integrated pre-biased base-emitter junction, allowing for direct DC coupling of the input signal, preventing the same from the getting distorted. The low drive current of 3 mA facilitates the use of the device in low power applications. The base-emitter breakdown voltage is 85V while the collector-emitter breakdown voltage is 150V. The current gain of the device is 100. The working of the DTC143EET1 is simple. When a voltage is applied to the base terminal of the device, current begins to flow through the base-emitter junction which generates a potential difference between collector and emitter of the device. This potential difference will be proportional to the base current. This allows the device to amplify a weak input current and produces higher output current. The DTC143EET1 is capable of performing various functions such as digital control, power amplifiers, low frequenc y amplifiers, fast switching and general purpose switching. The high-speed switching of the device makes it suitable for high power applications like audio amplifiers, power switching for relays and solenoids or for digital control of motors and actuators.Also, since the DTC143EET1 features low drive current levels and pre-biased base-emitter junction, it can be used in low power applications like fan speed controllers and light dimming circuits. The device can also be used in RF amplifiers and cellular phones as well.The DTC143EET1 can be easily integrated into existing systems and thus avoids the need of external circuitry. Moreover, the device’s low drive current and pre-biased base-emitter junction make it particularly suitable for applications where power dissipation should be minimized. The DTC143EET1 is solder reflow compatible, RoHS compliant, and is also available in SOT-23 and SOIC packages making it suitable for a wide range of applications. Overall, the DTC143EET1 is a versatile device that can be used for numerous applications such as digital control, switching, fast switching, power amplification and general purpose applications. With its low drive current, pre-biased base-emitter junction and pre-biased base collector junction, it is particularly suitable for low power applications where power dissipation should be minimized.

The specific data is subject to PDF, and the above content is for reference

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