Allicdata Part #: | DTC123TET1G-ND |
Manufacturer Part#: |
DTC123TET1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 0.2W SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC123TET1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01495 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
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The DTC123TET1G is a single, pre-biased, bipolar junction transistor (BJT) with improved bias stability. It is commonly used in a variety of applications, ranging from automotive to consumer electronics. In this article, we will take a look at the application fields and working principle of the DTC123TET1G.
Application Fields of the DTC123TET1G
The DTC123TET1G is well-suited for large-signal operation in a wide range of environments, such as automotive, industrial, and consumer electronics. Its stable bias characteristics make it particularly suitable for applications like power amplifiers, pulse width modulators, and voltage regulators.
Aside from its bias stability, the DTC123TET1G also offers superior performance in terms of switching time, noise margin, and power dissipation. This makes it a great choice for applications that require fast response times or need to operate in harsh environmental conditions. Moreover, its small size and low cost make it an attractive option for cost-sensitive applications.
Working Principle of the DTC123TET1G
The DTC123TET1G is a single, pre-biased, bipolar junction transistor (BJT). It consists of two PN junctions connected in series, between the emitter and collector. A small base current controls the flow of current between the emitter and the collector.
When the base current is increased, the current flowing between the emitter and collector increases. When it is decreased, the current flowing between the emitter and collector decreases. This feature allows the DTC123TET1G to be used as an amplifier or switch.
The DTC123TET1G has a significantly improved bias stability compared to other BJTs. This is achieved through its built-in temperature compensation and pre-biased base current. As a result, the device’s characteristics remain relatively stable across operating temperatures, eliminating the need for external biasing networks.
Conclusion
The DTC123TET1G is a single, pre-biased, bipolar junction transistor (BJT). It is well-suited for use in a variety of applications due to its improved bias stability, fast response times, and low power dissipation. Moreover, its small size and low cost make it a great option for cost-sensitive applications. This article explored the application fields and working principle of the DTC123TET1G.
The specific data is subject to PDF, and the above content is for reference
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