Allicdata Part #: | DTC144EETLTR-ND |
Manufacturer Part#: |
DTC144EETL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW EMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC144EETL Datasheet/PDF |
Quantity: | 6000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Base Part Number: | DTC144 |
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The DTC144EETL is a single, pre-biased transistor classified within the bipolar junction transistor (BJT) family. It is designed to provide maximum stability for various applications which require high frequency switching. This device is specifically designed for automotive electronics, due to its low on-state resistance and enhanced power dissipation capabilities. With the DTC144EETL the on-state resistance is reduced, but the current leakage is slightly higher compared to other single transistors.
The DTC144EETL is commonly used in applications such as Bridge Rectifier and H-bridges. It utilizes a high frequency switching operation and has low on-state resistance. Additionally, it has a low energy gap to enable high speed and amplification. The device can handle temperatures up to +175°C, ensuring reliable operation in extreme temperature conditions and in critical environments.
The working principle of the DTC144EETL is based on the classic bipolar and field effect transistors (FET) structure. The current flow is controlled by two junctions which are formed in the semiconductor body by the integration of P and N type silicon. This allows for maximum stability, providing an effective switching device with small on-state resistance.
The bipolar junction transistor works in a similar way to the traditional FET, but the addition of the P-N junction increases the on-state resistance compared to a FET. This occurs due to the gate voltage and the volume of electrons that must be produced for the conduction of current. This phenomenon is known as the Early effect and occurs in BJTs, where the collector current is affected by gate parameters and control. The DTC144EETL devices uses this effect to reduce the on-state resistance, providing devices with an enhanced power dissipation and low leakage current.
The DTC144EETL in its single, pre-biased configuration can be used in power switch applications such as on-off motors, as well as high-frequency switching electronics. Its low energy gap and high switching frequency makes it suitable for various applications, especially those requiring high speed and reliability. Moreover, it is particularly suitable for extreme temperatures conditions, where its low thermal resistance ensures reliable operation at up to +175°C.
The DTC144EETL transistor is a single, pre-biased transistor classified within the bipolar junction transistor (BJT) family. With its low on-state resistance and high switching frequency, it is designed specifically for automotive electronics applications. The working principle of the DTC144EETL is based on the classic bipolar and field effect transistors (FET) structure, with a P-N junction increasing the on-state resistance compared to other devices. This makes the DTC144EETL suitable for power switch applications such as on-off motors, as well as high-frequency switching electronics, and can handle temperatures up to +175°C.
The specific data is subject to PDF, and the above content is for reference
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