DTC115EET1

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DTC115EET1 is an NPN Silicon Bipolar Transistor with pre-biased base and emitter leads. It is commonly used in applications such as switching, amplifying, and signal mixing. The transistor is designed using advanced low voltage enabled process technology, making it suitable for operation under a wide temperature range. This feature makes the transistor ideal for use in various applications including industrial, automotive, and consumer electronics.

The DTC115EET1 is designed to be used in systems requiring voltage ratings of up to 150V. Its maximum current rating is up to 500mA. The device has an IC – VCE breakdown point of about 75V. The precision of the current gain rolloff feature is very high with a ratio of 0.2 %/V. This makes the transistor suitable for use in precision circuits.

The integrated pre-bias as well as pre-emitter resistors minimize the stress on the output circuitry, thus enabling the circuits to function properly in heavily loaded conditions. The use of these resistors will also help to maintain the switching performance of the transistor. In addition, the integrated pre-bias and pre-emitter resistors will ensure the transistor’s current limit is not exceeded. As a result, the device remains safe in all operating conditions.

The working principle of the DTC115EET1 is simple. The device operates by monitoring the difference in the current between its collector and emitter which is then compared with the voltage that is applied across the base-emitter junction. When the current between the collector and emitter exceeds the voltage applied to the base-emitter junction, the transistor will switch off, thus reducing the current flow through the circuit. This basic working principle is the same for all types of bipolar transistors, including the DTC115EET1.

The DTC115EET1 is perfect for switching, amplifying, and signal mixing applications for industrial and automotive applications. The transistor’s pre-bias and pre-emitter resistors reduce stress on the output circuitry and ensure that the current limit is not exceeded. The advanced low voltage enabled process technology of the device allows it to be used in a wide temperature range, making it highly reliable and durable.

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