DTC143EEBHZGTL Allicdata Electronics
Allicdata Part #:

DTC143EEBHZGTLTR-ND

Manufacturer Part#:

DTC143EEBHZGTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN 100MA 50V DIGITAL TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143EEBHZGTL datasheetDTC143EEBHZGTL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02362
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Description

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A DTC143EEBHZGTL is a single, pre-biased, bipolar junction transistor (BJT). It is a form of transistor that is suited to many applications, owing to its unique design. The DTC143EEBHZGTL is typically used as a switch for high voltage, high current applications, as well as for logic and interfacing applications. Its main advantages over other transistors are its very low on-state voltage drop, its robustness against thermal runaway, and its good manufacturability.

At the heart of the DTC143EEBHZGTL is its base-collector-emitter (B-C-E) structure. Like all BJTs, it uses either n-type or p-type silicon layers to channel electricity between its components. The base-collector layer of the DTC143EEBHZGTL is pre-biased, meaning that a very small base-emitter voltage must be applied to turn it on. This makes the transistor behave more like a switch than regular transistors. When a positive voltage is applied at the base, current flows from the collector to the emitter.

The DTC143EEBHZGTL offers several key advantages over other pre-biased BJTs. One of the most important is its very low on-state voltage drop, which can be as low as 0.2V. This is essential for applications where power conversion efficiency is key. The transistor is also particularly robust against thermal runaway, which can happen in transistors with large power ratings when the temperature rises too high. This can cause the transistor to suddenly draw large amounts of current, leading to overheating and sometimes catastrophic failure.

Another advantage of the DTC143EEBHZGTL is its manufacturability. The transistor can be produced with a very accurate and reliable manufacturing process, which enables the device to perform consistently in numerous applications.This makes it a popular choice for logic and interfacing circuits. The DTC143EEBHZGTL can also be used to drive high voltage and high current loads, such as solenoids, motors and lamps.

In conclusion, the DTC143EEBHZGTL is a single, pre-biased, bipolar junction transistor which is ideal for applications requiring low on-state voltage drop, robustness against thermal runaway, and consistent performance. It can be used for logic and interfacing circuits, as well as for powering high voltage, high current loads. Its features and performance make it ideal for use in many different applications.

The specific data is subject to PDF, and the above content is for reference

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