Allicdata Part #: | DTC143EEBHZGTLTR-ND |
Manufacturer Part#: |
DTC143EEBHZGTL |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 100MA 50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC143EEBHZGTL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02362 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
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A DTC143EEBHZGTL is a single, pre-biased, bipolar junction transistor (BJT). It is a form of transistor that is suited to many applications, owing to its unique design. The DTC143EEBHZGTL is typically used as a switch for high voltage, high current applications, as well as for logic and interfacing applications. Its main advantages over other transistors are its very low on-state voltage drop, its robustness against thermal runaway, and its good manufacturability.
At the heart of the DTC143EEBHZGTL is its base-collector-emitter (B-C-E) structure. Like all BJTs, it uses either n-type or p-type silicon layers to channel electricity between its components. The base-collector layer of the DTC143EEBHZGTL is pre-biased, meaning that a very small base-emitter voltage must be applied to turn it on. This makes the transistor behave more like a switch than regular transistors. When a positive voltage is applied at the base, current flows from the collector to the emitter.
The DTC143EEBHZGTL offers several key advantages over other pre-biased BJTs. One of the most important is its very low on-state voltage drop, which can be as low as 0.2V. This is essential for applications where power conversion efficiency is key. The transistor is also particularly robust against thermal runaway, which can happen in transistors with large power ratings when the temperature rises too high. This can cause the transistor to suddenly draw large amounts of current, leading to overheating and sometimes catastrophic failure.
Another advantage of the DTC143EEBHZGTL is its manufacturability. The transistor can be produced with a very accurate and reliable manufacturing process, which enables the device to perform consistently in numerous applications.This makes it a popular choice for logic and interfacing circuits. The DTC143EEBHZGTL can also be used to drive high voltage and high current loads, such as solenoids, motors and lamps.
In conclusion, the DTC143EEBHZGTL is a single, pre-biased, bipolar junction transistor which is ideal for applications requiring low on-state voltage drop, robustness against thermal runaway, and consistent performance. It can be used for logic and interfacing circuits, as well as for powering high voltage, high current loads. Its features and performance make it ideal for use in many different applications.
The specific data is subject to PDF, and the above content is for reference
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