DTC143EUBHZGTL Allicdata Electronics
Allicdata Part #:

DTC143EUBHZGTLTR-ND

Manufacturer Part#:

DTC143EUBHZGTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN DIGITAL TRANSISTOR (WITH BUI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143EUBHZGTL datasheetDTC143EUBHZGTL Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
Description

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The DTC143EUBHZGTL belongs to the transistors family, specifically to Bipolar Junction Transistors (BJT) Single, Pre-Biased.

A bipolar junction transistor is a type of transistor that uses two junctions to control current flow. Unlike a field-effect transistor (FET), a BJT uses both electron and hole carriers in order to form an electric current. It is widely used in a variety of electronics applications from digital and analog circuits to amplifiers and switching circuits.

The DTC143EUBHZGTL is a pre-biased transistor that features a high DC current gain, low collector-emitter saturation voltage, and fast switching speeds. It has a continuous collector current of 150 mA, a collector-emitter voltage of 40 V, and a maximum power dissipation of 625 mW. It provides reliable operation and good noise immunity in a variety of different applications.

The working principle of the DTC143EUBHZGTL transistor is based on the bipolar junction transistor structure. It consists of a base, collector, and emitter. The base is used to control the current flowing between the collector and emitter. When a small current is applied to the base, a large current can be allowed to flow through the collector and emitter. The amount of current flowing through the transistor is limited by the biasing voltages on the base and collector, which can be adjusted using external components. The output of the transistor is determined by the current gain, which is the ratio of the output current to the input current.

The DTC143EUBHZGTL transistor is used in a wide range of applications such as amplifier circuits, switching circuits, digital and analog circuits, logic gates, oscillators, and drivers. It is also used in power supply circuits, rectifiers, and voltage regulators. This device is suitable for use in commercial, automotive, and home applications such as TV sets, DVD players, radio frequency amplifiers, inverters, and other power switching applications.

In conclusion, the DTC143EUBHZGTL transistor is a pre-biased BJT device with a wide range of applications. It is used in a variety of electronic circuits, including amplifier circuits, logic gates, and power supply circuits. The device has a low collector-emitter saturation voltage, fast switching speeds, and a high current gain, making it suitable for a variety of applications. By understanding the working principle of the transistor, you can use the DTC143EUBHZGTL in your next design project.

The specific data is subject to PDF, and the above content is for reference

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