DTC143XEBHZGTL Discrete Semiconductor Products |
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Allicdata Part #: | DTC143XEBHZGTLTR-ND |
Manufacturer Part#: |
DTC143XEBHZGTL |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 100MA 50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC143XEBHZGTL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02362 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
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The DTC143XEBHZGTL is a single, pre-biased bipolar junction transistor (BJT) that has a range of applications. This type of transistor has a collector-base voltage of 70 V, a collector-emitter voltage of 40 V, and an emitter-base voltage of 4.0 V. It is designed to have an unusually low collector-base capacitance of 0.2 pF, making it ideal for high-frequency applications. Additionally, the DTC143XEBHZGTL has a continuous collector-emitter current of 50 mA and a peak collector current of 100 mA, making it capable of handling more power than most BJTs.
The working principle of the DTC143XEBHZGTL is relatively straightforward. In a BJT, an emitter, base, and collector region allow a current to flow between the emitter and collector when current is driven into the base. In this transistor, the current flows from the collector to the emitter. The base region is designed to be very thin, which allows for most of the current to flow from the collector to the emitter. This causes the transistor to act like a switch, wherein the collector current is controlled by the base current. The more current that is flowed into the base, the more current will flow from the collector to the emitter.
The application field for the DTC143XEBHZGTL is varied. Its high-frequency capabilities, low capacitance, and relatively high current rating make it suitable for high-speed switching circuits, including power amplifiers and motor controllers. Additionally, its low capacitance allows it to function as a high-gain amplifier at high frequencies, making it useful in radio and audio circuits. Furthermore, it can be employed as a current-switch in circuits with specialized requirements, such as high-power or high-speed motor control applications.
In summary, the DTC143XEBHZGTL single, pre-biased bipolar junction transistor has a range of applications due to its unusually low collector-base capacitance and its suitability for high-speed switching and radio/audio circuits. Its working principle involves a current flowing from the collector to the emitter when a current is driven into the base, allowing for a switch-like action. With its wide range of capabilities and performance features, the DTC143XEBHZGTL is an excellent choice for a variety of application fields.
The specific data is subject to PDF, and the above content is for reference
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