DTC143XUBHZGTL Allicdata Electronics
Allicdata Part #:

DTC143XUBHZGTLTR-ND

Manufacturer Part#:

DTC143XUBHZGTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN DIGITAL TRANSISTOR (WITH BUI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143XUBHZGTL datasheetDTC143XUBHZGTL Datasheet/PDF
Quantity: 3000
3000 +: $ 0.02362
Stock 3000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
Description

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DTC143XUBHZGTL is a type of single, pre-biased, bipolar junction transistor (BJT). It is part of a family of transistors manufactured by the company Fairchild Semiconductor and is specially designed to be used in applications that require the use of pre-biased circuits. The circuit must also include a voltage regulator, such as a Zener diode, in order to protect the transistor from overexposure to the bias voltage. This type of transistor is well-suited for such applications due to its relatively high input impedance and its low voltage drop across the collector and emitter when a signal is passed through it.

The DTC143XUBHZGTL is a NPN BJT which means that it is made up of three semiconductor layers: the emitter layer, the base layer, and the collector layer. The emitter layer is composed of \'n\' type material while the base and the collector layers are composed of \'p\' type material. The collector layer is connected to a ground plane while the base is isolated. The emitter layer is connected to an input terminal and has a high impedance. The base layer is connected to the bias voltage source and is used to control the current flow through the transistor.

Bipolar transistors operate in three different modes depending on the type of signal which is applied to the base-emitter junction. In the zero-bias mode, no voltage is applied to the base and the current between the emitter and collector is determined solely by the internal parameters of the transistor. In an active-mode, a bias voltage is applied to the base and this causes the transistor to switch between two different currents depending on the applied voltage. In the saturation mode, the applied voltage is greater than the transistor\'s threshold voltage and this causes the current to travel from the emitter to the collector at its maximum rate.

Using the DTC143XUBHZGTL in a pre-biased mode is advantageous since it eliminates the need to constantly adjust the bias voltage in order to switch between the different current levels. This makes it a better choice for applications that need to have low maintenance. Furthermore, this type of transistor is capable of passing signals with high-frequencies which makes them well suited for use in audio amplification and radio frequencies.

In conclusion, the DTC143XUBHZGTL is an excellent choice for applications that require a pre-biased transistor. It features a high input impedance, low voltage drop across the collector-emitter, and the ability to pass high frequency signals. Furthermore, it does not require constant adjustment of the bias voltage in order to switch between the different current levels. Therefore, it is a great choice for applications that need to have low maintenance and high reliability.

The specific data is subject to PDF, and the above content is for reference

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