DTC144EET1G Discrete Semiconductor Products |
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Allicdata Part #: | DTC144EET1GOSTR-ND |
Manufacturer Part#: |
DTC144EET1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC144EET1G Datasheet/PDF |
Quantity: | 27000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Base Part Number: | DTC144 |
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The DTC144EET1G is a type of pre-biased single bipolar junction transistor (BJT). It is in the family of discrete transistors, and these devices have certain characteristics that make them appealing to a range of applications. The advantage of using BJTs is that they are easy to use as well as efficient. They are included in many electronic designs.
These transistors are commonly used in amplifiers, power supplies, and other electronics. They are popular for their ability to handle both low and high voltages. This makes them ideal for use in power supplies and amplifiers. The DTC144EET1G is designed to offer superior performance in these applications. In addition, these transistors are often used in noise-sensitive circuits.
The DTC144EET1G features an adjustable base current, which allows the current to be adjusted to achieve optimal performance. This feature is important when the base current is used to set the gain in an amplifier or other applications. Additionally, these transistors feature a wide range of operating frequencies, up to 2 MHz. This makes them suitable for a variety of applications, including digital and analog circuits.
The DTC144EET1G is pre-biased, which means that the collector current can be set to a predetermined level. This feature is beneficial because it allows the current to be regulated. As a result, the device can be used in either a single-stage or multi-stage amplifier. It also eliminates the need for additional external components for voltage regulation.
The DTC144EET1G has a high-current gain (or hfe) of between 140 and 240. This means that the maximum current can be high when the base current is low. This is beneficial because it allows the device to function in various applications, even at low current levels. Additionally, the high-current gain means that power dissipation is minimized.
The DTC144EET1G also offers a low saturation voltage. This is important because it provides a higher degree of accuracy when creating an amplifier or any other circuit. Additionally, the device features a low leakage current, which ensures that unwanted currents do not interfere with an amplifier’s performance.
The DTC144EET1G’s performance can be further enhanced by pairing it with a complementary device, such as the DTC144EET2G. This device is designed to offer an optimal balance of current gain, low-forward voltage, and low output capacitance. When used in combination, these two transistors can improve an amplifier’s performance and stability.
In conclusion, the DTC144EET1G is a versatile transistor that is suitable for a variety of applications, including amplifiers, power supplies, and noise-sensitive circuits. It is pre-biased and has a high-current gain, low saturation voltage, and low leakage current. It can also be used in combination with complementary devices, such as the DTC144EET2G, to improve the performance of an amplifier.
The specific data is subject to PDF, and the above content is for reference
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