EDZTE6111B Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Voltage - Zener (Nom) (Vz):	11V
Tolerance:	±2%
Power - Max:	150mW
Impedance (Max) (Zzt):	30 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 8V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SC-79, SOD-523
Supplier Device Package:	EMD2
Base Part Number:	EDZ11

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EDZTE6111B Application Field and Working Principle

The EDZTE6111B is a type of single Zener diode, classified as a low-voltage, superfast, and ultra-low capacitance protection device. It is primarily used in applications that require enhanced protection from high-level ESD events, such as on-chip protection for gate drive chips, gate arrays, and other advanced ASICs. Its general purpose, low voltage protection and transient suppression capabilities also make it useful for electronic component protection for motherboards, power supplies and I/O ports.The EDZTE6111B is also known for its ability to provide significantly improved overvoltage protection, featuring a breakdown voltage of -7V to +954V, a fast switching speed of 5ns, and a wide operating temperature range of -55°C to +150°C. It also features an approximately 10 kHz AC working voltage of up to 950V and a low capacitance of 2.3pF typical.In order to understand the EDZTE6111B\'s working principle, it is important to consider the properties of a diode in general. A diode is an electrical component that allows the flow of current in one direction while restricting the flow of current in the other direction. This is due to the fact that diodes are constructed with two sets of semiconductor layers, with one set able to conduct electricity in a single direction more effectively than the other. The EDZTE6111B, as a Zener diode, has a breakdown voltage that is lower than the standard PN junction diode. When a reverse voltage is applied to the diode, the electrons in the diode\'s PN junction are able to be pushed beyond their normal capacity, creating an avalanche effect in which the circuit’s electrons are depleted and the diode\'s breakdown voltage is achieved. This is known as the Zener effect and allows for the breakdown voltage of the EDZTE6111B to be much lower than a standard PN junction diode.The EDZTE6111B is extensively used in applications that require fast overvoltage protection and transient suppression capabilities. Its high surge capability, fast switching times, and its ultra-low capacitance make it a highly reliable ESD protection device. The device is also specifically designed with heightened durability in mind, utilizing a ceramic package, which provides excellent thermal, electrical, and long-term mechanical performance.In summary, the EDZTE6111B is a type of single Zener diode which is used in applications that require enhanced ESD protection and transient suppression. It features a wide operating temperature range, low capacitance, and high surge capability, making it ideally suited for on-chip protection, gate drive chips, gate arrays and other ASICs. Furthermore, due to its ceramic package, the EDZTE6111B also provides excellent thermal, electrical, and mechanical performance.

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