EDZTE616.8B Discrete Semiconductor Products |
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Allicdata Part #: | EDZTE616.8BTR-ND |
Manufacturer Part#: |
EDZTE616.8B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 6.8V 150MW EMD2 |
More Detail: | Zener Diode 6.8V 150mW ±2% Surface Mount EMD2 |
DataSheet: | EDZTE616.8B Datasheet/PDF |
Quantity: | 9000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±2% |
Power - Max: | 150mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 3.5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | EMD2 |
Base Part Number: | EDZ6V8 |
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Diodes - Zener - Single
A Zener diode, also called a "breakdown diode," is a diode that operates in the reverse breakdown region and is used for voltage regulation or as a protected switch for electronic circuits with relatively low power requirements. The EDZTE616.8B is a 6.8V Zener diode made from silicon and ideal for use in a wide range of electronic applications. It is particularly useful in controlling, guiding and stabilizing voltage in applications such as electronic test equipment, equipment for factory automation, portable medical instruments, and power supply circuits.
Application Field
For applications with lower voltage requirements, the EDZTE616.8B is a reliable Zener diode that is used in a wide variety of products such as medical equipment, computer workstations, industrial control systems, radios, and portable electronics. Due to its relatively good reverse breakdown voltage and low dynamic impedance, it is an ideal choice for use in power supply applications requiring either voltage regulation or voltage clamping.
Clamping applications make use of the EDZTE616.8B to prevent the voltage from reaching a level that could damage the electronic components. The diode will then operate in the breakdown or reverse breakdown region and limit the voltage variations to a small value. This is extremely useful in protecting against electric shocks and controlling power supply output voltage.
Working Principle
The EDZTE616.8B operates in the reverse breakdown region when the voltage applied to its anode exceeds the breakdown voltage (BD) of 6.8V. When the voltage across its terminals drops below the reverse breakdown voltage (RV), the diode stops conducting and the applied voltage is clamped at its breakdown voltage value. This effectively regulates the voltage passing through the diode.
The EDZTE616.8B also offers superior performance in comparison with regular Zeners when it comes to Zener impedance. It features a low dynamic impedance characteristic that allows it to handle overshoot pulses and help reduce voltage changes in response to sudden load changes. This characteristic makes it especially suitable for use in power supply circuits that need reliable voltage regulation.
The EDZTE616.8B is a reliable and versatile Zener diode that is used in a wide variety of applications, especially those that require reliable voltage regulation or clamping. Its low dynamic impedance and high reverse breakdown voltage make it ideal for use in low power handheld devices, automotive electronics, and industrial control systems.
The specific data is subject to PDF, and the above content is for reference
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