EDZTE6112B Discrete Semiconductor Products |
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Allicdata Part #: | EDZTE6112BTR-ND |
Manufacturer Part#: |
EDZTE6112B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 12V 150MW EMD2 |
More Detail: | Zener Diode 12V 150mW ±2% Surface Mount EMD2 |
DataSheet: | EDZTE6112B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±2% |
Power - Max: | 150mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 9V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | EMD2 |
Base Part Number: | EDZ12 |
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EDZTE6112B is a single Zener diode, meaning that it is composed of just one semiconductor. It is in the form of a glass top, axial-lead device. It is specifically used in circuits with digital components, including low and medium power, regulating and clamping devices.
An EDZTE6112B is a diode with a heavily doped p-n junction. This junction, when forward-biased, allows current to flow in one direction, with only a slight voltage drop. When reverse-biasing, the entire junction breaks down, allowing current to flow in both directions. This breakdown is the basis of the diode’s Zener operation. When the voltage across the junction reaches the diode’s breakdown voltage, the current can vary based on the amount of reverse bias applied. This basically allows the diode to regulate the voltage across it.
The EDZTE6112B is able to offer both low-ripple characteristics and shock resistance due to its encapsulated glass package. The encapsulated package also eliminates the need for external insulation due to its protective covering. This makes the EDZTE6112B particularly suitable for use in transformerless power supplies, switching power supplies and battery-operated equipment.
In terms of its application field, the EDZTE6112B is primarily used as voltage regulators in many electronic circuits. Its high reverse breakdown voltage allows it to be used in circuits that require a regulated voltage across the device. It facilitates the effective management of power in digital components, such as microprocessors, so that these components can correctly operate. Other potential applications include negative voltage regulation, current limiters, ESD protection, and snubber circuits.
As mentioned before, the EDZTE6112B is composed of a single semiconductor, and has a maximum reverse breakdown voltage of 10V. Its rated power dissipation is 350mW and its forward voltage drop is typically around 0.7V. Its operating temperature range is -55° C to +150° C and its maximum junction temperature is 150° C. This diode can operate at frequencies up to 1MHz and it also offers fast response times.
In conclusion, the EDZTE6112B is a single Zener diode, primarily used to regulate voltages in digital components. It is packaged in a glass casing for added shock resistance and protection. It has a reverse breakdown voltage of 10V and it can operate at frequencies up to 1MHz. It is used in transformerless power supplies, battery-operated equipment and other digital components. The EDZTE6112B is a versatile and efficient diode, with a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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