EDZTE6120B Discrete Semiconductor Products |
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Allicdata Part #: | EDZTE6120BTR-ND |
Manufacturer Part#: |
EDZTE6120B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 20V 150MW EMD2 |
More Detail: | Zener Diode 20V 150mW ±2% Surface Mount EMD2 |
DataSheet: | EDZTE6120B Datasheet/PDF |
Quantity: | 27000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±2% |
Power - Max: | 150mW |
Impedance (Max) (Zzt): | 85 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 15V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | EMD2 |
Base Part Number: | EDZ20 |
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EDZTE6120B Application Field and Working Principle
The EDZTE6120B is a single zener diode that is used in the application field of voltage and current regulation. In such applications, the EDZTE6120B’s zener characteristics are utilized to shunt excess current or voltage to ground or supply, thereby providing an adjustable, constant limits for a current or voltage flow. It is available in a range of voltages, which are typically between 2V and 220V, as well as power ratings up to 1.5W.
The EDZTE6120B’s electrical working principle is based on the process of the current-voltage breakdown of the reverse-biased pn junction. This is accomplished by applying a reverse-biased voltage across the junction. As the reverse-biased voltage increases, in space charge region, electrons and holes diffuse from the n and p sides of the junction. This process creates a highly conductive channel across the junction and as soon as the reverse bias voltage reaches the breakdown point of the pn junction, a Townsend avalanche starts and avalanche current flows, in the reverse direction, through the junction and the EDZTE6120B Zener diode starts to conduct. This breaks down the pn junction and causes a large increase in the current.
As the reverse bias voltage increases further, the breakdown voltage is held nearly constant as the junction avalanche current increases. The current is limited by the external resistor connected in series with the diode which dissipates heat in the form of heat energy and hence regulates the current through the diode. As the zener voltage is regulated, it provides regulated voltage over a wide range of load current. Therefore, the EDZTE6120B is used in voltage and current regulation in many applications such as voltage stabilizer, regulator, surge protector, rectifier and others.
The efficiency of the EDZTE6120B is maximized at an optimum bias voltage for a desired application. However, if the power dissipation is high, an additional heat sink is provided for maintaining optimal temperature. This is due to the fact that with increasing temperature, the current through the diode increases significantly, reducing the efficiency. Therefore, the EDZTE6120B needs to be adequately cooled during continuous operation.
In summary, the EDZTE6120B single zener diode is an ideal part for voltage and current regulation. It has a wide range of voltage ratings that is between 2V and 220V. It can be used in many applications such as voltage stabilizer, regulator, surge protector and rectifier. It is most efficient at an optimum bias voltage and products with higher power ratings may need an external heat sink for temperature control for maximizing efficiency.
The specific data is subject to PDF, and the above content is for reference
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