| Allicdata Part #: | EGL34BHE3_A/H-ND |
| Manufacturer Part#: |
EGL34BHE3_A/H |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 100V 500MA DO213 |
| More Detail: | Diode Standard 100V 500mA Surface Mount DO-213AA (... |
| DataSheet: | EGL34BHE3_A/H Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.07903 |
| Series: | Automotive, AEC-Q101, Superectifier® |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 500mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 500mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AA (Glass) |
| Supplier Device Package: | DO-213AA (GL34) |
| Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are one of the most ubiquitous components in electrical and electronic circuits, and the single diode is a device whose design facilitates a single direction of current. The EGL34BHE3_A/H is a single diode device whose application field encompasses general purpose power and signal rectification. In order to understand the working principle of this device, it is essential to first become familiar with the fundamental principles of a diode.
A diode is basically an electronic component that consists of two terminals, the anode and the cathode. It is basically a one-way switch that stops current flow in one direction while allowing current to flow in the reverse direction. The diode is an ideal choice for regulating current in applications where the voltage or current needs to be unidirectional. This is the fundamental operating principle of the EGL34BHE3_A/H.
The EGL34BHE3_A/H is a single diode offering from the family of general purpose power and signal rectifying diodes. It is a highly reliable device comprising three terminals, namely, the anode, cathode and gate, which are connected to a semiconductor body. This device is mainly used for rectification purposes and is capable of handling substantial currents. Its wide operating temperature range and small package size make it well suited for a variety of rectification applications.
The device offers high stability characteristics and its low forward voltage drop indicates its ability to reduce power consumption. Furthermore, it is equipped with high accuracy temperature coefficient that maintains the accuracy of the device during varying temperature conditions. Due to its robust construction, the EGL34BHE3_A/H offers a high surge current capacity, making it an ideal choice for applications involving transient current conditions.
The device also offers excellent reverse-recovery time, which is a measure of the time required for the device to return to its forward conduction state after a reverse-biased condition has been removed. Its fast switching capabilities make it suitable for high speed switching applications. The EGL34BHE3_A/H can also be used as a switch element in various types of switching circuits like inverters, servo systems and audio power amplifiers.
The EGL34BHE3_A/H is also well suited for a wide range of rectifying applications that require a high surge current capacity and fast switching. It can be used as a rectifier in such applications as AC-DC converters, DC-DC converters, voltage regulator modules, automotive electronics and solar cell charging systems. The device’s low forward voltage drop allows it to reduce power loss in these rectifying applications while its robust construction and wide operating temperature range makes it suitable for applications in various environment conditions.
In summary, the EGL34BHE3_A/H is a single diode device offering high surge current capacity, a wide range of operating temperature, low forward voltage drop, fast switching and a high accuracy temperature coefficient. It is well suited for general purpose power and signal rectification in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EGL34CHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
| EGL34AHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
| EGL34CHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
| EGL34FHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
| EGL34D-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 500MA... |
| EGL34F-E3/98 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 500MA... |
| EGL34GHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 500MA... |
| EGL34CHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
| EGL34A-E3/98 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
| EGL34AHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
| EGL34B-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 500MA... |
| EGL34C-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 500MA... |
| EGL34GHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 500MA... |
| EGL34AHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
| EGL34G/51 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 500MA... |
| EGL34D-E3/98 | Vishay Semic... | -- | 2500 | DIODE GEN PURP 200V 500MA... |
| EGL34DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 500MA... |
| EGL34FHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
| EGL34BHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
| EGL34BHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
| EGL34DHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 500MA... |
| EGL34BHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
| EGL34AHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
| EGL34G-E3/83 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 500MA... |
| EGL34GHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 500MA... |
| EGL34B-E3/98 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 500MA... |
| EGL34C-E3/98 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 500MA... |
| EGL34DHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 500MA... |
| EGL34FHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
| EGL34BHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
| EGL34CHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
| EGL34FHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
| EGL34D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 500MA... |
| EGL34DHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 500MA... |
| EGL34GHE3/98 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 500MA... |
| EGL34G-E3/98 | Vishay Semic... | -- | 2500 | DIODE GEN PURP 400V 500MA... |
| EGL34A-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
| EGL34F-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 500MA... |
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EGL34BHE3_A/H Datasheet/PDF