EGL34GHE3_A/I Allicdata Electronics
Allicdata Part #:

EGL34GHE3_A/I-ND

Manufacturer Part#:

EGL34GHE3_A/I

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 500MA DO213
More Detail: Diode Standard 400V 500mA Surface Mount DO-213AA (...
DataSheet: EGL34GHE3_A/I datasheetEGL34GHE3_A/I Datasheet/PDF
Quantity: 1000
9000 +: $ 0.08449
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: Automotive, AEC-Q101, Superectifier®
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Introduction to the EGL34GHE3_A/I

The EGL34GHE3_A/I is one of the many semiconductor diodes available from various manufacturers. It is classified under the category of single rectifiers. It is a 3.0 ampere, 35 volt Schottky barrier rectifier. It is a low cost, low voltage, high current diode and is suitable for power supply circuits, DC-DC converters, inverters, suppressed voltage circuits, and even high-speed circuits.

Application Field of the EGL34GHE3_A/I

The EGL34GHE3_A/I is designed to be used in all applications where a low voltage, high current diode is required. It is perfect for applications such as power supplies, DC-DC converters, inverters, and suppressed voltage circuits. It is also suitable for use in high speed circuits, given its low forward voltage drop and fast switching speed. Furthermore, the Schottky barrier design of the diode gives it low forward voltage, making it ideal for use in low loss applications.

Working Principle of the EGL34GHE3_A/I

The EGL34GHE3_A/I is a Schottky barrier rectifier. This means that a barrier is formed around the p-n junction of the diode which prevents the flow of electrons into the junction. The Schottky barrier also enables very fast switching as the path of least resistance is not through the junction, but rather in a direct, straight line. This leads to a low forward voltage drop, which reduces power losses. The diode also features high peak current ratings, enabling it to be used in applications requiring high current.

Conclusion

In conclusion, the EGL34GHE3_A/I is a single rectifier diode from the semiconductor class of diodes. It is a Schottky barrier diode and is especially suited for use in applications such as power supplies, DC-DC converters, inverters, suppressed voltage circuits, and high speed circuits. It has a low voltage, high current design, with a low forward voltage drop and fast switching speed. It is also capable of handling high peak currents, making it a practical choice for most applications.

The specific data is subject to PDF, and the above content is for reference

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