EGL34CHE3/83 Allicdata Electronics
Allicdata Part #:

EGL34CHE3/83-ND

Manufacturer Part#:

EGL34CHE3/83

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 500MA DO213
More Detail: Diode Standard 150V 500mA Surface Mount DO-213AA (...
DataSheet: EGL34CHE3/83 datasheetEGL34CHE3/83 Datasheet/PDF
Quantity: 1000
9000 +: $ 0.08449
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: EGL34C
Description

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Diodes - Rectifiers - Single

The EGL34CHE3/83 is a silicon rectifier diode which can be used for various types of power switching applications. It is a fast-recovery, low-power, reverse-blocking diode with excellent thermal characteristics and tight voltage regulation for high current continuous operation.

The EGL34CHE3/83 is ideal for low forward drop and low reverse leakage with a tight voltage regulation capability at high current levels. It is a high-performance diode which is used in a variety of power switching applications, including power-supply and portable battery systems, inverters, AC-to-DC converters, and voltage-controlled switches.

Application Fields:

  • Low forward drop and low reverse leakage
  • High current continuous operation
  • Switch-mode power supply and portable battery systems
  • Inverters
  • AC-to-DC converters
  • Voltage-controlled switches

Working Principle:

The EGL34CHE3/83 operates under the principle of a Forward-biased junction diode in which electrons flow from the n-type side (cathode) to the p-type side (anode). When connected in the forward direction, the diode will forward bias the junction and allow current to flow through the device. This type of diode is most commonly used for power switching applications since it can handle high currents and has a low forward voltage drop.

In reverse bias, the EGL34CHE3/83 will block current flow and create a high reverse breakdown voltage, which makes it suitable for use in AC/DC converters and voltage-controlled switches. It also has a fast-recovery time, which helps to avoid unwanted voltage dips and overloading during power switching applications.

Conclusion:

The EGL34CHE3/83 is an excellent choice for use in power switching applications due to its low forward voltage drop and tight voltage regulation capabilities. It is also a fast-recovery diode, making it suitable for applications where voltage dips and overloading need to be avoided. It is designed to handle high currents and also has a high reverse breakdown voltage, making it suitable for use in AC/DC converters and voltage-controlled switches.

The specific data is subject to PDF, and the above content is for reference

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