EGL34DHE3_A/H Allicdata Electronics
Allicdata Part #:

EGL34DHE3_A/H-ND

Manufacturer Part#:

EGL34DHE3_A/H

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 500MA DO213
More Detail: Diode Standard 200V 500mA Surface Mount DO-213AA (...
DataSheet: EGL34DHE3_A/H datasheetEGL34DHE3_A/H Datasheet/PDF
Quantity: 1000
10000 +: $ 0.07903
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: Automotive, AEC-Q101, Superectifier®
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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The EGL34DHE3_A/H diode is a general purpose single rectifier. It finds many applications in power supplies, chargers, DC/DC converters and motor controls. It is built with a rugged construction and reliable performance. These features make the EGL34DHE3_A/H rectifier suitable for a wide range of applications.

This device is a medium power, ultrafast recovery single rectifier with low reverse leakage current. The device is housed in the TO-220F package, providing a low-profile package with improved thermal efficiency. The device is available in a range of voltage breakdowns from 50V to 1kV and can handle currents up to 6A.

It has a low reverse current leakage of <50mA at 500V and a maximum forward voltage drop of 0.94V at 3A.The EGL34DHE3_A/H is suitable for high-frequency applications, where reverse recovery time needs to be fast and the forward voltage drop kept low.

The EGL34DHE3_A/H diode works by allowing current to flow in one direction only. To achieve this, it employs a basic PN junction. A PN junction consists of two doped semiconductor materials; one side is doped with an ‘n’ type (trivalent) conducting material and the other side doped with a ‘p’ type (pentavalent) conducting material.

The junction between the two materials creates an electric field which has the effect of blocking current flow in the reverse direction while allowing it to pass in the forward direction. The diode is built with a rugged construction and reliable performance. This makes the EGL34DHE3_A/H well-suited for a wide range of power supply, charger and DC/DC converter applications.

The diode has a low reverse current leakage of <50mA at 500V and a maximum forward voltage drop of 0.94V at 3A. Its fast reverse recovery time makes it an excellent choice for high-frequency applications. Its rugged construction and reliable performance make it suitable for a wide range of applications.

In conclusion, the EGL34DHE3_A/H is a general purpose single rectifier that finds many applications in power supplies, chargers, DC/DC converters and motor controls. Its fast reverse recovery time and low reverse current leakage make it suitable for high-frequency applications. It is built with a rugged construction and reliable performance, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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