
Allicdata Part #: | EGL34GHE3/98-ND |
Manufacturer Part#: |
EGL34GHE3/98 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 500MA DO213 |
More Detail: | Diode Standard 400V 500mA Surface Mount DO-213AA (... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.09000 |
10 +: | $ 0.08730 |
100 +: | $ 0.08550 |
1000 +: | $ 0.08370 |
10000 +: | $ 0.08100 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA (Glass) |
Supplier Device Package: | DO-213AA (GL34) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | EGL34G |
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EGL34GHE3/98 Diodes - Rectifiers - Single Application Field and Working Principle
EGL34GHE3/98 diodes - rectifiers - single are a type of semiconductor which is mainly used for the conversion of AC (Alternating Current) to DC (Direct Current). They are commonly employed in radio frequency (RF) circuits, digital electronics and airplane/automotive applications where an efficient way to convert AC power to DC power is required. The EGL34GHE3/98 diode is designed to handle high power ratings and has superior switching characteristics.
Diodes are the fundamental electronic components which are used in almost all electronic circuits. They are primarily used to control the direction of the current flow in circuits. In an electrical circuit, the act of converting AC to DC is known as rectification. A rectifier is an electronic device which is specifically designed to do this job. Rectifiers are composed of two or more diodes connected together.
The EGL34GHE3/98 diode is a one-piece planar epitaxial diffused silicon diode which is specifically designed for use in high-frequency switching applications. It is fabricated with a glass passivation layer to improve reliability and power handling capability. The silicon used in this diode is of a higher grade than the conventional semiconductor material and hence, it provides superior switching characteristics. The substrate is formed with a defined slope for improved impedance matching and better EMI (electromagnetic interference) characteristics.
The EGL34GHE3/98 diode is designed as a full wave rectifier which uses six diodes to effect the AC to DC transformation. In a full wave rectifier, the high-frequency AC input current is evenly distributed between the three pairs of diodes (two in each pair) which are connected together in opposite directions. This forms a bridge rectifier which allows the current to flow alternately in each direction across the bridge.
The operation of the EGL34GHE3/98 diode is mainly dependent on the mechanism of forward bias, which follows the same principle as a conventional diode. When a positive voltage is applied to the anode and a negative voltage is applied to the cathode, the electron flow from the anode to the cathode through the diode material creates a forward current between the two terminals. This current follows a defined path which is arranged by the components of the diode material.
The EGL34GHE3/98 diode is mainly used in applications where high current and high frequency switching is required. Its superior switching characteristics make it ideal for power supply applications such as in aircraft and automotive applications, as well as radio frequency (RF) circuits. It is also popular as a protection circuit to guard against short circuits.
The EGL34GHE3/98 diode is an effective way to convert AC to DC power in applications where high power ratings are required. Its superior switching characteristics make it ideal for high-frequency switching applications. The six-diode bridge circuit associated with it ensures that the current is distributed evenly across the bridge, allowing higher current handling capability. Overall, the EGL34GHE3/98 diode is a useful device for many applications due to its superior switching capabilities and power handling capability.
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Part Number | Manufacturer | Price | Quantity | Description |
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EGL34A-E3/98 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
EGL34G/51 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 500MA... |
EGL34AHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
EGL34CHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
EGL34FHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
EGL34CHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
EGL34GHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 500MA... |
EGL34DHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 500MA... |
EGL34GHE3/98 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 500MA... |
EGL34G-E3/83 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 500MA... |
EGL34D-E3/98 | Vishay Semic... | -- | 2500 | DIODE GEN PURP 200V 500MA... |
EGL34DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 500MA... |
EGL34FHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
EGL34D-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 500MA... |
EGL34FHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
EGL34BHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
EGL34B-E3/98 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 500MA... |
EGL34BHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
EGL34F-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 500MA... |
EGL34G-E3/98 | Vishay Semic... | -- | 2500 | DIODE GEN PURP 400V 500MA... |
EGL34C-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 500MA... |
EGL34B-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 500MA... |
EGL34D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 500MA... |
EGL34BHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
EGL34GHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 500MA... |
EGL34CHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
EGL34AHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
EGL34BHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 500MA... |
EGL34AHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
EGL34CHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 500MA... |
EGL34FHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 500MA... |
EGL34C-E3/98 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 500MA... |
EGL34DHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 500MA... |
EGL34AHE3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
EGL34F-E3/98 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 500MA... |
EGL34GHE3/83 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 500MA... |
EGL34DHE3/98 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 500MA... |
EGL34A-E3/83 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 500MA ... |
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