
Allicdata Part #: | EGL41AHE3_A/I-ND |
Manufacturer Part#: |
EGL41AHE3_A/I |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 1A DO213AB |
More Detail: | Diode Standard 50V 1A Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.08153 |
Series: | Automotive, AEC-Q101, Superectifier® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
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EGL41AHE3_A/I is a type of single rectifier diode, which is mainly used in open-minded rectification and its applications mainly involve AC-DC voltage conversion and rectification in power engineering. It is a symmetrical silicon rectifying diode, which gives improved temperature coefficient and operates as a fast switching diode. In power engineering, EGL41AHE3_A/I is mainly used for electric machines, conversion of electromagnetic energy into mechanical energy, electric power conditioning and voltage regulation.
EGL41AHE3_A/I uses the electric field which is created between two electric charges to convert AC voltage or current into DC voltage or current. Two electric charges are then passed through a semiconductor junction to form a reverse biased diode. This electric field will cause the movement of electrons, creating either current or voltage depending on the diode. When the diode is used in AC-DC voltage conversion, the electric field will create an opposite voltage, which is then rectified and can be used to convert the AC signal into a DC voltage.
In addition to AC-DC voltage conversion, EGL41AHE3_A/I can also be used for rectification in power engineering. Here, the electric field will cause a voltage spike when the diode is entering forward bias, allowing for an effective electrical rectification. When the diode is entering reverse bias, the electric field will instead cause current to flow allowing for the return of charge carriers back to their original positions.
The main advantages of using EGL41AHE3_A/I are its fast switching capabilities, improved temperature coefficient and its robust design. The fast switching capabilities of the diode allow for quick and efficient rectification of AC waveforms into DC waveforms, making it a suitable device for high-power applications. The improved temperature coefficient also allows for improved temperature stability of the diode, making it a more reliable choice for power engineering. Finally, its robust design makes it a reliable and resilient device, which can be used in applications with a wide range of temperatures and operating conditions.
In conclusion, EGL41AHE3_A/I is a type of single rectifier diode that is mainly used in AC-DC voltage conversion and rectification in power engineering. It offers fast switching capabilities, improved temperature coefficient and a robust design which makes it the ideal choice for a variety of applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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EGL41B-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41C-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41F-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41GHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41FHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41G-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41AHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41FHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41B/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41BHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41FHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41GHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41DHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41FHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41CHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41CHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41GHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41D-E3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41D-E3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41DHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41B-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
EGL41BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41G/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41BHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41DHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41A-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41AHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41CHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41AHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41CHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41AHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41BHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41F-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41C-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41G-E3/96 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 400V 1A DO... |
EGL41GHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41A-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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