
Allicdata Part #: | EGL41BHE3_A/I-ND |
Manufacturer Part#: |
EGL41BHE3_A/I |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO213AB |
More Detail: | Diode Standard 100V 1A Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.08153 |
Series: | Automotive, AEC-Q101, Superectifier® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
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EGL41BHE3_A/I is a type of single rectifier diode that possesses many useful properties for the modern electrical engineer. This component is used in a variety of applications due to its ability to convert alternating current (AC) to direct current (DC) at low voltages. As such, it is well suited for use as a rectifier in power supply and other applications involving high currents and voltages.
In terms of physical characterization, the EGL41BHE3_A/I measures 4.0 x 3.2 x 0.9mm and has a maximum forward voltage of 1.0V and reverse voltage of 600V. Further, it is considered another type of fast recovery diode, possessing a reverse recovery time of 10 nanoseconds. It also holds a peak forward surge current of 5A. All of these properties indicate that it is both a robust and reliable component, suitable for a number of power-oriented uses.
The main purpose of the EGL41BHE3_A/I is to convert AC to DC power, meaning it can turn an alternating current into a constant direct current. This is a key component of power supplies, which requires the rectification of incoming AC current. This device accomplishes this by having an anode connected to the DC side, and a cathode connected to the AC side. As the current flows, when it reaches the anode, the current is diverted and grounded, resulting in a constant direct current.
Further, the EGL41BHE3_A/I also offers a high-speed switching ability and a low forward voltage drop. This allows it to efficiently and quickly switch from one current or voltage level to the others, while still receiving the same amount of power. This makes it ideal for use in high current, high voltage devices such as motor controllers, power supply controllers, power factor controllers, and other industrial applications. Additionally, the low forward voltage drop allows it to efficiently handle a high current load, giving it an advantage over other types of rectifier diodes.
Because of its many advantageous properties, the EGL41BHE3_A/I is becoming an increasingly common component in a variety of industrial applications. Its ability to handle high currents, switch quickly and efficiently under pressure, and offer a low voltage drop all make it an ideal component for many types of equipment. Its reliable construction and robust components make it well-suited for the demands of the industrial environment and make it a great addition to any device.
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Part Number | Manufacturer | Price | Quantity | Description |
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EGL41B-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41C-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41F-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41GHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41FHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41G-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41AHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41FHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41B/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41BHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41FHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41GHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41DHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41FHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41CHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41CHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41GHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41D-E3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41D-E3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41DHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41B-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
EGL41BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41G/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41BHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41DHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41A-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41AHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41CHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41AHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41CHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41AHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGL41BHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGL41F-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGL41C-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 1A DO... |
EGL41G-E3/96 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 400V 1A DO... |
EGL41GHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGL41DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGL41A-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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