| Allicdata Part #: | EGL41DHE3_A/I-ND |
| Manufacturer Part#: |
EGL41DHE3_A/I |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 1A DO213AB |
| More Detail: | Diode Standard 200V 1A Surface Mount DO-213AB |
| DataSheet: |  EGL41DHE3_A/I Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.08153 |
Specifications
| Series: | Automotive, AEC-Q101, Superectifier® |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 200V |
| Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AB, MELF (Glass) |
| Supplier Device Package: | DO-213AB |
| Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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EGL41DHE3_A/I is a type of diode that belongs to the single rectifier family. Single rectifiers are used for various applications in the field of electronics, such as rectification of AC to DC and controlling current flow, among many others. The EGL41DHE3_A/I type of rectifier is a Schottky barrier diode, which is characterized by a very fast switching action as well as low forward voltage drop and extreme reverse leakage current.The main principle behind a single rectifier is to convert AC voltage to DC voltage, while allowing or blocking current flow. This can be done using the "forward bias" and "reverse bias" configurations. In a forward bias configuration, the diode is connected so that current can flow through it, allowing for the conversion of AC to DC voltage. On the other hand, in a reverse bias configuration, the diode is connected in such a way that current cannot flow through it, which allows for the control of current flow.The EGL41DHE3_A/I single rectifier can be used in a wide range of applications, such as power supplies, motor drives, automotive circuits and solar cells, just to name a few. This type of diode also has a low forward voltage drop, meaning that it consumes less power than other types of diodes. It can also be used to control high-frequency switching speeds, as it operates very quickly and has a high switching speed. The EGL41DHE3_A/I single rectifier is also able to operate with high levels of efficiency and reliability, making it a very suitable option for many applications. Additionally, it is also resistant to vibration and shock, meaning that it can be used in more demanding environments.Due to its excellent performance and wide range of applications, the EGL41DHE3_A/I single rectifier is a reliable and cost-effective solution for a variety of applications in the field of electronics. Its fast switching speeds, low power consumption, and high efficiency make it suitable for a variety of situations, from powering motors and automotive circuits to controlling high-frequency switches. This type of diode is also resistant to vibration and shock, which makes it suitable for more demanding environments.
The specific data is subject to PDF, and the above content is for reference
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| EGL41G-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGL41AHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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| EGL41B/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGL41BHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGL41FHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGL41GHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGL41DHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41FHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGL41CHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGL41CHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGL41GHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGL41D-E3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41D-E3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41DHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41B-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
| EGL41BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGL41D/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41G/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGL41BHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGL41DHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41A-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGL41AHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGL41CHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGL41AHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGL41CHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGL41AHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGL41BHE3/96 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGL41F-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
| EGL41C-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGL41G-E3/96 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 400V 1A DO... |
| EGL41GHE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| EGL41DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGL41A-E3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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