EGL41CHE3_A/H Allicdata Electronics
Allicdata Part #:

EGL41CHE3_A/H-ND

Manufacturer Part#:

EGL41CHE3_A/H

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 1A DO213AB
More Detail: Diode Standard 150V 1A Surface Mount DO-213AB
DataSheet: EGL41CHE3_A/H datasheetEGL41CHE3_A/H Datasheet/PDF
Quantity: 1000
9000 +: $ 0.08715
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: Automotive, AEC-Q101, Superectifier®
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Description

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EGL41CHE3_A/H diodes are single rectifiers, used for a variety of applications, most of which involve efficient electricity conversion or regulation. These rectifiers can be used for buck, flyback, forward and half-bridge converters, as well as for high-intensity power conversion, voltage regulation, and motor speed control.

The EGL41CHE3_A/H diodes feature high voltage and low electric current, a small and light housing, and a robust design, making them uniquely suited for high-power applications. With a peak reverse voltage of 600V and an average forward current of 41A, the EGL41CHE3_A/H is able to handle a wide range of power requirements.

The working principle of the EGL41CHE3_A/H diode is based on the P-N junction. P-type semiconductor materials and N-type semiconductor materials are used to form a P-N junction. When a positive voltage is applied to the P-type side and a negative voltage is applied to the N-type side, a potential difference forms between the two sides. When a current flows through the diode, the potential difference results in an electric field across the P-N junction, which allows the current to pass through. This is known as the forward bias of the diode.

In reverse bias mode, the potential difference is reversed and the P-N junction acts as a barrier, preventing current from flowing through. The voltage required to reverse bias the diode and form the barrier, known as the reverse breakdown voltage, is dependent on the type of material used. For the EGL41CHE3_A/H, the reverse breakdown voltage is 600V.

In addition to the P-N junction, the EGL41CHE3_A/H diode includes a number of other components that are important in regulating the flow of current and ensuring safe operation. These components include a diffusion resistor to limit the forward current, a shorting diode to reduce the amount of reverse current, and a freewheeling diode to protect against electrical transients. All of these components are designed and integrated into the package.

The EGL41CHE3_A/H is ideal for applications where power conversion and voltage regulation are vital, including motor control for pumps and fans, power supply lines for motors, and power conversion for battery charging. The diode can also be used for motor speed control, surge protection, and voltage clipping/regulating. Due to its robust design, reliability, and high power handling, the EGL41CHE3_A/H is a great choice for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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