EKI10198

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	116W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3990pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	55.8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	17.8 mOhm @ 23.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	47A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction
EKI10198 is a single-channel MOSFET transistor that is specifically designed and manufactured to meet the performance criteria of many applications. It is a power device that can be used in various fields such as DC power, voltage control and signal switching. In this article, we will discuss the applications and working principle of EKI10198.Applications
The EKI10198 is a versatile MOSFET transistor both in terms of its ability to operate in high-current and high-voltage conditions. First and foremost, its primary application is in the area of DC power supply where it can be used in switching circuits as well as in amplifier circuits. It can also be used for voltage control and signal switching, making its applications quite wide.For instance, in power supplies, the EKI10198 can be used to control the voltage output from a converter or transformer. It can also be used for DC motor speed control, which is especially beneficial for applications such as robotics and automation. Additionally, due to its fast switching speed, it can be used in amplifier circuit designs for high-frequency audio applications.The EKI10198 is also often chosen for its low on-resistance. This means that it can handle more current than other transistors, and it can be used to build power supplies and switching circuits that are more efficient. Furthermore, the EKI10198 has a low internal capacitance, which makes it ideal for high-speed signal switching in digital circuits.Working Principle
At a basic level, the working principle of the EKI10198 is the same as that of any MOSFET transistor. It is designed with a metal-oxide semiconductor field effect (MOSFET) structure, where the metal gate is located on a silicon substrate. This structure creates an electric field between the metal gate and the substrate, which allows current to flow in the channel created between them.The EKI10198 works by operating in either a high-current or high-voltage mode. In the high-current mode, the channel between the gate and substrate is biased open and current flows freely. In the high-voltage mode, the channel is biased closed, so current cannot flow until a certain threshold voltage is reached.When the voltage on the gate of the EKI10198 exceeds the threshold voltage, the channel opens up and current is allowed to flow. This process can be used to control the output of the device, and it can be used for both switching and voltage control applications.Conclusion
All in all, the EKI10198 is a single-channel MOSFET transistor that is designed for many applications. It is designed with a metal-oxide semiconductor field effect (MOSFET) structure, which allows for high-current and high-voltage control. Its applications include DC power supply, voltage control, and signal switching. Furthermore, its low on-resistance and internal capacitance makes it a highly versatile device.

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