Allicdata Part #: | EKV550-ND |
Manufacturer Part#: |
EKV550 |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 50V TO-220 |
More Detail: | N-Channel 50V 50A (Ta) 85W (Tc) Through Hole TO-22... |
DataSheet: | EKV550 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.82992 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4.2V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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The EKV550 is a single n-channel NMOS transistor specifically designed for use in low voltage, high speed switching applications. It offers excellent performance characteristics under both static and dynamic conditions. It features low on-state resistance and excellent switching performance, making it ideal for a wide range of applications including logic level switching, small signal switching, power MOSFET switches and low power switching.
The EKV550 transistor is a low-threshold NMOS transistor designed for high speed switching. It is a field effect transistor (FET) with integrated gate, drain, and source electrodes. The gate electrode is used to control the amount of current that can flow through the device by varying the gate voltage. The EKV550 has an extended drain-source voltage rating of 30V and can handle up to 1A of continuous drain current. It has a maximum switching frequency of 150 MHz and a breakdown voltage of 30V. The power dissipation of the device is typically less than 1W.
The EKV550 operates in a similar manner to a MOSFET, and follows the same operating principle. The device relies on the controlled application of voltage to the gate electrode to control the current flow between the drain and source electrode. A positive voltage applied to the gate creates an inversion layer at the interface between the silicon substrate and the insulating layer, allowing current to flow between the drain and source. The amount of current is directly proportional to the voltage applied to the gate, and is referred to as the drain-source current. The higher the gate voltage, the higher the drain-source current. Conversely, a lower voltage applied to the gate will produce less current. In this way the device is used to control the amount of current that can flow between the drain-source.
Depending on the application, it is possible to control the device using either a positive or negative voltage. Applications include logic-level switching, power MOSFET switches, and low power switching. The EKV550 can be used as a single, dual, or even quad-channel transistor depending on the requirements of the application. It is commonly used in a variety of signal and power applications including DC to DC converters, UPS systems, power supplies, audio amplifiers, and medical instrumentation.
The on-state resistance of the EKV550 is generally less than 60 mOhms and its switching performance is comparable to that of other single-channel MOSFETs. It can be used for a wide range of logic-level and power switch applications, and offers excellent performance under static and dynamic conditions. In addition, the EKV550 offers the advantage of being able to be used as a single, dual, or quad-channel device depending on the requirements of the application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EKV550 | Sanken | 0.92 $ | 1000 | MOSFET N-CH 50V TO-220N-C... |
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