EMD22FHAT2R Allicdata Electronics
Allicdata Part #:

EMD22FHAT2RTR-ND

Manufacturer Part#:

EMD22FHAT2R

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP+NPN DIGITAL TRANSISTOR (CORR
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: EMD22FHAT2R datasheetEMD22FHAT2R Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03572
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): --
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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The EMD22FHAT2R device is a bipolar array pre-biased transistor designed and manufactured by ON Semiconductor. This model is a monolithic bipolar digital integrated circuit designed for applications requiring two switched transistors. The device is a matched pair of transistors formulated from a dielectric microcrystalline silicon gate compound. It is available in an 8-pin SOIC package.

The EMD22FHAT2R transistor array is a unique combination of two NPN monolithic bipolar transistors. The two transistors are connected in a pre-biased configuration, in which one transistor functions as a pull-up device and one as aswitch. By utilizing this arrangement, the device’s on-state resistance is minimized, reducing switch-on and switch-off times while still allowing significant current capability. The device also features a low-power consumption, which is beneficial in battery-operated or similar applications.

The working principle of the EMD22FHAT2R is relatively straightforward. When the input is low, the device is off. When the input is high, both transistors in the array turn on. The pull-up transistor supplies a path for the voltage source to bias the switch, turning it on. The closed switch provides a path for the current from the voltage source, which is then controlled by the current of the pull-up device.

The EMD22FHAT2R is designed primarily for use in digital switching applications, including relays, LEDs andother general-purpose as well as specialized tasks. Additionally, the device is low-power and can be used in battery operated equipment as well. Due to its minimal and precise biasing, the EMD22FHAT2R is highly efficient and exhibits low power dissipation.

In conclusion, the EMD22FHAT2R is a pre-biased bipolartransistor array designed and manufactured by ON Semiconductor. This device is an ideal solution for digital switching applications, providing minimal and precise biasing with low power dissipation. This device combines matched pair NPN transistors that act as a pull-up device and a switch, allowing for exceptional performance in battery-operated equipment.

The specific data is subject to PDF, and the above content is for reference

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