Allicdata Part #: | EMD2T2RTR-ND |
Manufacturer Part#: |
EMD2T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | EMD2T2R Datasheet/PDF |
Quantity: | 8000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | *MD2 |
Supplier Device Package: | EMT6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Bipolar junction transistor (BJT) arrays are commonly found in integrated circuits. These transistors are commonly grouped together in order to increase their power handling capabilities and improve their performance. One such type of BJT array is the EMD2T2R (emitter, drain, and two transistor array with two resistors). This type of BJT array has been around since the early days of integrated circuits, but has become increasingly popular in modern electronics due to its multiple advantages. Understanding the application fields and working principle of EMD2T2R can help in the proper selection and utilization of this type of transistor array.
The application field of EMD2T2R is extensive and includes general analog and digital signal amplifiers, power supplies, instrumentation amplifiers, audio amplifiers, microphone amplifiers, and many more. In most of these cases, the EMD2T2R offers more power and performance than conventional BJT configurations. This makes it the preferred choice for many applications. Furthermore, EMD2T2R can also be used as switches in various devices, such as digital logic circuits.
The unique feature of EMD2T2R is that it includes two resistors (R1 and R2) that are initially biased to approximately 12V or 0V. This biasing system ensures that the transistors are always in the correct state and that no current can flow through them without an external signal. As a result, EMD2T2R is also commonly used in applications that require reliable and accurate switching, such as logic circuits. Furthermore, the initial biasing improves the dynamic performance of the transistors and helps reduce power consumption.
The working principle of EMD2T2R is relatively straightforward. In the simplest configuration, there are two BJT transistors (Q1 and Q2) connected to an emitter, drain, and two resistors (R1 and R2). When a signal is fed into the emitter, it passes through the two transistors, with R1 and R2 controlling the current flow. When the voltage across the emitter and drain is increased or decreased, the current flow is also increased or decreased, thereby controlling the overall output. Depending on the application, additional transistors can be added to the circuit, such as Q3 and Q4, which can be used to provide additional gain.
EMD2T2R is an extremely versatile and powerful type of BJT array. It is used in a wide range of applications, from amplification to switching, and is preferred for its high current handling capabilities and improved dynamic performance. Understanding its application fields and working principle can help electronics engineers select and use the most appropriate configuration for their specific requirements.
The specific data is subject to PDF, and the above content is for reference
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