EMD2FHAT2R

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	--
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	EMT6

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EMD2FHAT2R application field and working principle

Introduction

An EMD2FHAT2R is a type of pre-biased transistor array composed of bipolar junction transistors (BJTs). The device is used in various applications such as general-purpose amplifiers, waveform synthesizers, sequencers, comparators and waveform memories. EMD2FHAT2R is especially suitable for replacing complicated circuits. It contains two voltage-buffered amplifiers, two unity-gain buffers and two differential amplifiers. It is designed to integrate multiple functions so that it can reduce the component count and simplify system design compared to an array of discrete transistors.

EMF2FHAT2R Structure

The EMD2FHAT2R array consists of four NPN and PNP transistors connected in a push-pull configuration. The collector of one NPN transistor is connected to the collector of the other PNP transistor and both are connected to the output. Similarly, the emitter of the NPN transistor is connected to the emitter of the PNP transistor and both are connected to the ground. The base of the NPN transistor is connected to the input voltage source and the base of the PNP transistor is connected to the feedback voltage source. The EMD2FHAT2R array contains two voltage-buffered amplifiers, two unity-gain buffers and two differential amplifiers.

EMD2FHAT2R Operation

The EMD2FHAT2R array works on the principle of differential voltage gain, which is the ratio of the output voltage change to the input voltage change. As a result, the EMD2FHAT2R array amplifies the difference between the input and feedback voltages. The output voltage is proportional to the difference between the input and feedback voltages. When the input voltage is greater than the feedback voltage, the base of the NPN transistor is more positive than the base of the PNP transistor. This causes the NPN transistor to turn on and the PNP transistor to turn off. This results in a difference between the collector voltages of the NPN and PNP transistors and the output voltage increases. When the input voltage is less than the feedback voltage, the PNP transistor turns on and the NPN transistor turns off. This results in a difference between the collector voltages of the NPN and PNP transistors and the output voltage decreases. Since the EMD2FHAT2R array amplifies the difference between the input and feedback voltages, it can be used for various applications such as amplifiers, waveform synthesizers, sequencers, comparators and waveform memories. The device can be used in a wide variety of applications and is especially useful for replacing complex circuits.

Conclusion

The EMD2FHAT2R array is an integrated transistor array composed of bipolar junction transistors (BJTs). It contains two voltage-buffered amplifiers, two unity-gain buffers and two differential amplifiers. The EMD2FHAT2R array amplifies the difference between the input and feedback voltages and can be used in various applications such as amplifiers, waveform synthesizers, sequencers, comparators and waveform memories. The device is useful for replacing complex circuits and reducing the component count in system designs.

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