| Allicdata Part #: | EMD29T2RTR-ND |
| Manufacturer Part#: |
EMD29T2R |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS NPN/PNP PREBIAS 0.12W EMT6 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: | EMD29T2R Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.08000 |
| 10 +: | $ 0.07760 |
| 100 +: | $ 0.07600 |
| 1000 +: | $ 0.07440 |
| 10000 +: | $ 0.07200 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
| Base Part Number: | *MD29 |
| Supplier Device Package: | EMT6 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 120mW |
| Frequency - Transition: | 250MHz, 260MHz |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 10 kOhms |
| Resistor - Base (R1): | 1 kOhms, 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V, 12V |
| Current - Collector (Ic) (Max): | 100mA, 500mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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An EMD29T2R pre-biased array is a bipolar junction transistor (BJT) array for use in high-performance applications. The device consists of several Bipolar Junction Transistors (BJT) in a pre-biased configuration, with the output Envelop Detector (EMD) signal lines connected to pre-biased emitters. This array is suitable for many applications, including signal conditioning, discrete device powering and switching, as well as providing signal, voltage and current control.
The EMD29T2R provides for a wide input voltage range, enabling it to be used for many different applications. This broad range of input voltages makes the device suitable for use in many different types of equipment, such as medical devices, industrial components and even automobiles. In addition, the device can be used to provide a wide range of performance characteristics. With an adjustable reverse gain control, temperature coefficient control and a range of voltage operating ranges, the BJT array can be tailored to meet specific performance requirements.
The working principle of the EMD29T2R is relatively simple. In a basic circuit, it consists of several BJTs connected in series. The BJTs in the circuit are interconnected so that they form a single, interconnected device. Each BJT in the array is pre-biased to a predetermined voltage level. This bias voltage determines the operation of the device, dictating the conductance of the circuitry and allowing for the modulation of the currents and voltages within the array.
The EMD29T2R is typically used in applications that require high-power capabilities and for which low-power consumption is a requirement. The device has been used in applications such as power inverters, active filters, inductor-less power supplies, pulse width modulators, converters and solid-state drives. This type of device is also highly beneficial in motor control applications and in the construction of arbitrary waveform generators.
The EMD29T2R can be used in a wide range of applications where a robust device is required. The device provides a robust, stable and reliable performance and can be used to implement sophisticated power management strategies. With its adjustable voltage and current control, the device also is able to provide an optimized power solution for a variety of systems.
In conclusion, the EMD29T2R is an important device for many modern applications. It is a stable, reliable and robust pre-biased BJT array that offers many advantages over conventional BJTs. With its adjustable voltage and current control, the EMD29T2R can be used in a wide range of applications to provide an optimized power solution.
The specific data is subject to PDF, and the above content is for reference
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EMD29T2R Datasheet/PDF