EMD53T2R Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	EMT6

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EMD53T2R Application Field and Working PrincipleEMD53T2R is a kind of pre-biased bipolar transistors array product which is mainly used for high-speed switching, high power amplification and operation of 6V to 15V DC motors. It is often used in the automotive, medical and industrial areas.The EMD53T2R is an integrated device, it is a three-transistor array consisting of two common-emitter transistors and one common-base transistor. The common-emitter transistors are NPN transistors and the common-base transistor is a PNP transistor. The gate supply voltage can range from -12V to 12V. The common-emitter transistor is used to drive the gate of the common-base transistor and amplify the drive current to the load. The common-base transistor is used to provide a voltage level shift to the load.The working principle of EMD53T2R is based on the combination of the NPN and PNP transistors. When the gate voltage is applied to the NPN transistor, it starts to act as a switch and conducts current from the collector to the emitter. This current is then passed to the PNP transistor, which acts as an amplifier and passes the current to the load. At the same time, the PNP transistor is also providing a voltage level shift to the load, acting as a voltage buffer.The EMD53T2R is a versatile device and is suitable for a wide range of applications. It can be used in power converters, medical imaging equipment, automotive applications and many other industrial applications. It is a robust device with high switching speed and wide temperature range. It has excellent power dissipation and current drive capabilities.The EMD53T2R is a beneficial device as it eliminates the need for external components such as resistors, diodes and transistors. It is suitable for panel mounting and may also be used with board-level mount aids. It also features reverse-polarity protection and ESD immunity. Overall, the EMD53T2R is an excellent device for high-speed switching, power amplification and motor control applications. Its integrated design allows for faster designs and simplified operations, making it suitable for a wide range of applications.

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