EMD59T2R Discrete Semiconductor Products

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EMD59T2R is a type of pre-biased bipolar junction transistor (BJT) transistors array. It comes in a handy, small-size flat, plastic package with a form of 8-Pin dual in-line with the JEDEC number TO-72. It is suitable for use in applications like computers and industrial control systems.

This type of transistor array is particularly designed to be employed in power amplifier and interface circuitry in computer, general-purpose, as well as industrial-control applications. The EMD59T2R consists of two NPN transistors with built-in NPN Darlington stages. It also comes with integral base resistors which allow the configuration to be used as two independent transistors, or as a dual common emitter transistor.

The EMD59T2R is an ideal choice for providing the high power output ability which is necessary for many applications like audio, driver and control circuits. With its wide bandwidth capabilities, this transistor array can offer quick frequency responses which make it suitable for audio, communication and RF systems. In comparison to regular transistors, the EMD59T2R provides superior noise rejection characteristics and higher immunity to crosstalk.

The working principle of the EMD59T2R is very similar to that of other BJT transistors, except that two NPN transistors are incorporated as one device and share a common base input. Electrons within the base region are injected from the surrounding N-type material and can then flow through the base-collector junction. This process is then followed by the emission of electron or hole from the collector to the emitter. When a current flows from the base to the emitter, the Darlington transistor will become active and the resistance of the collector-base junction will lower. Thus, a larger current flows from the collector to the emitter.

The EMD59T2R has a wide range of application fields, including use for audio amplification, speaker drivers, power amplifiers, and interface circuits in computers, industrial control systems, and other applications. Its integral two NPN transistors enables it to be used as a dual common emitter configuration. Thus, it is suitable for use in applications that require higher power outputs, such as audio, RF, and communication systems. Additionally, its high noise rejection characteristics and wide bandwidth capabilities help optimize audio performance, resulting in superior sound quality.

In conclusion, the EMD59T2R is an 8-Pin dual in-line pre-biased BJT transistor array with two integrated NPN transistors and integrated base resistors. It is suitable for use in various applications like audio, communication and RF systems requiring higher powers of output. It offers improved performance in terms of sound quality, noise rejection and its ability to withstand crosstalk. The working principle of this transistor array is also similar to that of other BJT transistors, except that two NPN transistors are incorporated as one device and share a common base input.

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