EMD5DXV6T1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms, 47 kOhms
Resistor - Emitter Base (R2):	10 kOhms, 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V / 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	500mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

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EMMD5DXV6T1 is a type of field effect transistor (FET) that is pre-biased for certain applications. It is a transistor array, meaning that there are multiple FETs in one package.The main advantage of EMMD5DXV6T1 is that the FETs are already biased and ready to use right out of the box. This helps to reduce the amount of effort needed to layout circuit boards, as well as saves time and money. It also increases the likelihood of a successful circuit design, as the FETs already have a base bias voltage. EMMD5DXV6T1 also has a wide application field, as it can be used in a variety of applications such as RF amplifiers, telecommunications systems, and embedded systems. It can also be used in power management solutions, motor control solutions, instrumentation solutions, and home automation systems.The working principle of the EMMD5DXV6T1 is based on the use of FETs. FETs are semiconductors that contain three terminals, a drain, a source, and a gate. The gate is used to control the current flowing from the drain to the source. When a voltage is applied to the gate, a thin layer of silicon dioxide is formed at the gate and this blocks the flow of current from the drain to the source. By varying the voltage applied to the gate, the current flowing from the drain to the source can be controlled.EMMD5DXV6T1 is a pre-biased arrangement of multiple FETs, which allows high current switching at high frequency and low power consumption. The FETs are already biased so they can be used immediately with minimal effort. In addition, they are designed to provide optimal current switching and low on-resistance.In summary, EMMD5DXV6T1 is a type of field effect transistor array that is pre-biased for certain applications. It is designed to reduce the effort needed to layout circuit boards and to increase the likelihood of success in circuit designs. It has a wide application field and it works by using FETs, which can be controlled by varying the voltage applied to the gate.

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