Allicdata Part #: | EMD5DXV6T5G-ND |
Manufacturer Part#: |
EMD5DXV6T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | EMD5DXV6T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06767 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms, 47 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms, 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EMD5DXV6T5G Pre-Biased Bipolar Transistor Arrays are highly sought after for their ability to provide high efficiency, low power consumption and rapid operation for many different applications. In this article, the application fields and working principles of the EMD5DXV6T5G will be discussed in detail. The application field of the EMD5DXV6T5G transistors array is quite wide, ranging from intricate control circuitry to demanding high speed switching. These units can be used in power supplies and embedded systems, as well as automotive and aerospace applications. In many of these applications, the EMD5DXV6T5G transistors array is more power efficient and more reliable than some other types of bipolar transistors.The EMD5DXV6T5G Pre-Biased Bipolar Transistor Arrays rely on the principle of exponential current amplification to generate the required voltage level. With this type of transistor, an input current is applied to the base, which is then amplified exponentially by the collector-emitter junction. As the voltage is increased, electrons from the collector can travel to the emitter, thus increasing the current flow.The exponential current gain characteristic of the EMD5DXV6T5G transistor allows for rapid switching and operation. This is due to the fact that the gap between the collector and the emitter narrows, causing the electrons to flow from the base to the emitter. As a result, the current increases exponentially and creates an output voltage. Furthermore, the rapid switching of the EMD5DXV6T5G transistors also benefits power management, since less power is consumed in comparison to other bipolar transistors.Another notable feature of the EMD5DXV6T5G transistors is its low power consumption, thanks to its special pre-biased biasing technique. During pre-biasing, a constant current is supplied to the base so that the collector-emitter junction is always slightly conductive. This helps to reduce switching losses and conserve energy.Overall, the EMD5DXV6T5G Pre-Biased Bipolar Transistor Arrays are highly sought after for their exceptional performance in many different applications. The low power consumption, high efficiency and rapid switching capabilities of the unit make it a very attractive option for many different industries.
The specific data is subject to PDF, and the above content is for reference
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