| Allicdata Part #: | ES1FV-ND |
| Manufacturer Part#: |
ES 1FV |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | DIODE GEN PURP 1.5KV 500MA AXIAL |
| More Detail: | Diode Standard 1500V 500mA Through Hole |
| DataSheet: | ES 1FV Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.13230 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1500V |
| Current - Average Rectified (Io): | 500mA |
| Voltage - Forward (Vf) (Max) @ If: | 2V @ 500mA |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 1.5µs |
| Current - Reverse Leakage @ Vr: | 10µA @ 1500V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | Axial |
| Supplier Device Package: | -- |
| Operating Temperature - Junction: | -40°C ~ 150°C |
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The ES 1FV is a Rectifier Diode designed to be used in high voltage systems. It is a fast-switching, low forward voltage device that can be used in a variety of applications ranging from high-voltage DC-DC converters and communication systems. The ES 1FV is a versatile device, with a wide range of capabilities and designs, from low capacitance and low-loss, to ultra-high-speed performance and moderate current handling. With a single device, it is possible to design rectification solutions for a variety of applications.The ES 1FV is a silicon-based diode that uses a combination of design elements, such as the structure of distribution of doping levels, and the optimization of passivated surfaces to create a highly efficient rectifying junction. This rectifying junction is responsible for creating a low-level forward voltage drop across its terminals, meaning that the ES 1FV can be used in circuits that have to switch rapidly and efficiently.The working principle of the ES 1FV is based on the fact that it has a PN junction, which is an opto-electronic barrier between two semiconductor materials. This PN junction is also what creates the forward voltage drop of the device. When the device is connected to an electrical supply, electrons are injected into the P region of the PN junction by the external potential. This injection of electrons creates an electric field that is stronger than the barrier potential, allowing the electrons to pass through the diode.The electrons that pass through the diode form a small current that is the basis of rectification. The process of rectification takes place when the amount of current flowing through the diode changes depending on the polarity of the applied voltage. If the applied voltage is positive, the current flows from the P-region to the N-region, and if the voltage is negative, the current flows in the opposite direction. This action of the ES 1FV creates a rectified output voltage waveform.The ES 1FV is well suited for applications that require both high-speed performance and low-power consumption. The device has very low forward voltage drop and low capacitance, meaning that it can be used in high-voltage applications with minimal losses. Additionally, its performance characteristics make it suitable for applications in communications, power control circuits, and DC-DC converters. The versatility of the device makes it an ideal choice for designs that need a rectifying element that is reliable, low-power, and inexpensive.
The specific data is subject to PDF, and the above content is for reference
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ES 1FV Datasheet/PDF