
Allicdata Part #: | ES1ALHMQG-ND |
Manufacturer Part#: |
ES1ALHMQG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.04737 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The ES1ALHMQG is a type of single rectifier diode that is widely used in many applications. This particular diode is a small-signal diode that is optimized to have low forward voltage drop, making it ideal for circuits that require low levels of power consumption. It is also known for its fast reverse recovery time which makes it an ideal choice for high frequency applications.
The ES1ALHMQG is a single-terminal device that consists of an anode and a cathode. The cathode is typically marked with a ring or a dot on its body. The anode is the terminal through which current flows from the device. As part of its construction, the ES1ALHMQG has a junction between the anode and the cathode which has a rectifying effect, allowing for the controlled flow of current.
This diode has a maximum repetitive reverse voltage of 27V and a maximum positive peak forward current of 1A. Furthermore, this type of diode is rated to have a very low forward voltage drop of 0.5V and an exceptionally fast reverse recovery time of 20ns. This low forward voltage drop and fast recovery time makes the ES1ALHMQG an ideal choice for power switching, protection against voltage spikes, and other applications where low levels of power consumption are required.
In terms of its working principle, the ES1ALHMQG functions like any other diode. When the anode voltage is below the cathode voltage, the diode acts as an open-circuit, preventing current from flowing through the device. When the anode voltage is greater than the cathode voltage, the diode becomes forward-biased and allows current to flow in the forward direction. This process is used to control the flow of current in circuits and is what makes the ES1ALHMQG so useful in many applications.
Aside from its general applications, the ES1ALHMQG can also be used to protect sensitive devices from high voltage surges or voltage transients. Its low forward voltage drop and fast reverse recovery time make it ideal for this application as it can quickly switch off and reduce the power sent to the device, protecting it from any damage. Another application where this diode is commonly used is in power switching circuits. Its low forward voltage drop and fast switching times make it ideal for high frequency applications.
Overall, the ES1ALHMQG is a versatile and reliable rectifier diode that can be used in a wide variety of applications. Its low forward voltage drop, fast reverse recovery time, and low power consumption make it an ideal choice for many applications ranging from power switching to protection from high voltage transients. This, combined with its single-terminal design, make it a popular choice for many applications that require a reliable, low-power diode.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1A-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A | ON Semicondu... | -- | 7500 | DIODE GEN PURP 50V 1A SMA... |
ES1AHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1A-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
ES1ALHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ES1AL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1A-LTP | Micro Commer... | 0.05 $ | 5000 | DIODE GEN PURP 50V 1A DO2... |
ES1ALHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1ALHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
ES1AWB | B&B Smar... | 0.0 $ | 1000 | SERIAL DEVICE SERVER 1-PO... |
ES1A-13-F | Diodes Incor... | -- | 45000 | DIODE GEN PURP 50V 1A SMA... |
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