Allicdata Part #: | ES1BLHM2G-ND |
Manufacturer Part#: |
ES1BLHM2G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 1A SUB SMA |
More Detail: | Diode Standard 100V 1A Surface Mount Sub SMA |
DataSheet: | ES1BLHM2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04737 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1BLHM2G is a kind of diodes which belongs to single rectifiers. This type of diode is widely used in event control, signalling, circuit protection and voltage regulation. By leveraging its capability of rectifying alternating current (AC) to direct current (DC), it enables the smooth and efficient flow of low power electrical currents in various applications.A single rectifier diode consists of two semiconductor layers, an anode and a cathode, that are connected by a p-n junction. The p-n junction is a region between the materials where the majority carriers of one layer (negatives for the negative layer) mix with the minority carriers of the other layer (positives for the negative layer). As electrons and holes recombine in the p-n junction region, the potential barrier created at the junction, allows for a controlled flow of current.The working principle of an ES1BLHM2G single rectifier diode is based on its p-n junction. When a voltage is applied across its anode, electrons from the anode flow to the n-region on the other side of the diode. The holes, which are positive charge carriers, move to the p-region. As the electrons and holes recombine in the p-n junction, the voltage applied to the anode is not able to pass through the junction and thus, the current flow is stopped. This is called the forward blocking mode of the diode.Meanwhile, when the voltage applied to the cathode is higher than that of the anode, the current flow is reversed. Electrons and holes move in opposite directions, towards their respective sides. As they recombine, the diode acts as a conductor, allowing the current to flow from the cathode to the anode and vice versa. This is what is known as the reverse conducting mode of the diode.The ES1BLHM2G rectifier diodes are most commonly used in event control, signalling, and voltage regulation applications. In the event control applications, the diode helps in producing low power electrical signals. In the signalling applications, the diode can be used to create basic electrical circuits for sending signals from one device to another. Lastly, in the voltage regulation applications, the rectifier diode helps in stabilizing the voltage flow and prevents any damage caused by spikes or dips in the current.The efficiency and accuracy of the ES1BLHM2G rectangular diodes directly depends on the quality and precision of its p-n junction. The junction must be carefully designed to allow the current to flow in the desired direction and at the required speed. This helps to reduce power losses and maintain a steady supply of energy.In addition to its numerous industrial applications, the ES1BLHM2G rectangular diodes are also widely used in automotive and consumer electronics. The diodes are effective in maintaining the electrical signals in order to reduce the risk of equipment failure or malfunction.In conclusion, ES1BLHM2G is one of the most popular single rectifier diodes available in the market. Its p-n junction design allows it to switch current in both reverse and forward directions. In addition, its compact size makes it suitable for a wide range of applications, ranging from event control to voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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