
Allicdata Part #: | ES2A-E3/5BT-ND |
Manufacturer Part#: |
ES2A-E3/5BT |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 2A DO214AA |
More Detail: | Diode Standard 50V 2A Surface Mount DO-214AA (SMB) |
DataSheet: | ![]() |
Quantity: | 1000 |
6400 +: | $ 0.08469 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | ES2A |
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ES2A-E3/5BT rectifiers are members of a family of high current, low voltage rectifiers designed for use in low voltage power supplies. The rectifier is a low forward-voltage drop type and can handle up to 1.5 A of continuous reverse current. The operating temperature range is from -40°C to 85°C.
The ES2A-E3/5BT rectifier family has two distinct application fields: power supplies for telecommunications and electronic control devices. The rectifier can also be used in other applications where the low forward voltage drop is desirable. These include DC motors and lighting controllers.
In general, ES2A-E3/5BT rectifiers are used to convert alternating current (AC) power to direct current (DC) power. The rectifier diode is a semiconductor device that acts as a one-way valve and allows current flow in only one direction. Current flows into the diode when the forward voltage applied to its anode is greater than the voltage on the cathode. The reverse voltage applied to the diode will cause reverse current flow, but at a much higher voltage.
The working principle of the ES2A-E3/5BT is based on the PN junction diode behavior. When a forward bias voltage is applied to the PN junction diode, current flows through the P side of the diode and gets collected at the N side of the diode. The voltage drop across the diode is referred to as the forward voltage. The forward voltage of the ES2A-E3/5BT is 1.0 V. The rectifier is a low forward-voltage drop type, which means that it can handle a lower voltage differential than other rectifiers. This type of diode is ideal for use in low voltage systems.
The reverse current characteristics of the ES2A-E3/5BT are also important to consider. The maximum reverse leakage current is 0.5 A, which is quite low compared to other rectifier diodes. This low leakage current ensures the device’s high efficiency and low power consumption. Additionally, the rectifier has a high surge current capability with a maximum peak reverse current of 1.5 A.
The ES2A-E3/5BT is available in two package types: a TO-92F and a TO-220F. The TO-92F is a surface-mount package with two leads, while the TO-220F is a through-hole package with three leads. The advantage of the surface-mount package is that it is easier to install, while the advantage of the through-hole package is that it is more robust and can handle higher temperatures.
The ES2A-E3/5BT rectifier family is an ideal choice for applications that require low forward voltage drop and excellent reverse current characteristics. It is perfect for power supplies in telecommunications and electronic control devices, as well as DC motors and lighting controllers. The device is available in two packaging options and can operate in temperatures between -40°C and 85°C.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2AA-13-F | Diodes Incor... | -- | 55000 | DIODE GEN PURP 50V 2A SMA... |
ES2A-E3/52T | Vishay Semic... | 0.15 $ | 750 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-LTP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-E3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A | ON Semicondu... | -- | 3000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHR3G | Taiwan Semic... | 0.08 $ | 3600 | DIODE GEN PURP 50V 2A DO2... |
ES2A M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMA... |
ES2AHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
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