
Allicdata Part #: | ES2AAR3GTR-ND |
Manufacturer Part#: |
ES2AA R3G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 2A DO214AC |
More Detail: | Diode Standard 50V 2A Surface Mount DO-214AC (SMA) |
DataSheet: | ![]() |
Quantity: | 1000 |
1800 +: | $ 0.07607 |
3600 +: | $ 0.06847 |
5400 +: | $ 0.06466 |
12600 +: | $ 0.05896 |
45000 +: | $ 0.05515 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Diodes - Rectifiers - Single: ES2AA R3G Application Field and Working PrincipleThe ES2AA R3G is a single, fast, ultra-sensitive rectifier diode with a 40V reverse current and a total power dissipation of 1W. This device is widely used in automotive, industrial, and commercial applications for rectification and voltage switching.The ES2AA R3G application field and operation principle can be broadly categorized as follows. ApplicationsThe ES2AA R3G is commonly used in automotive, industrial, and commercial applications. As an automotive rectifier, it is used to rectify voltage fluctuations caused by improper or insufficient grounding of the vehicle. The stability and protection of the circuitry can also be maintained despite unexpected spikes. In industrial settings, the diode is used to switch AC/DC voltages having a wide margin of safety because of its low leakage current. Because of its low reverse current, the ES2AA R3G is also useful in protecting circuits subject to high ESD (electrostatic discharge) events. Additionally, this rectifier is commonly used in communication systems to accurately monitor the power supply. In the commercial sector, the ES2AA R3G is used in a wide range of devices, from consumer electronics and power supplies to medical and scientific instruments. In consumer electronics, this diode provides greater component accuracy in sensing or measuring electrical signals, a feature that\'s also applicable to medical and scientific devices. Power supplies benefit from the ES2AA R3G’s fast switching characteristics and low forward voltage, which further improves their efficiency.Operation PrincipleThe ES2AA R3G is a single ultra-sensitive rectifier diode. It is composed of a p-type (doped) and an n-type (undoped) semiconductor, arranged in a bipolar structure. When the anode (positive) side is connected to a more positive potential (V+) than the cathode (negative) side, the diode conducts an electric current in the forward direction (arrow 1). This forward current flow is due to the negative charge, or holes, in the p-type semiconductor material readily moving into the n-type region, populated by the positively charged electrons. When the two terminals are reversed (cathode connected to a more positive potential than the anode), the diode does not allow current to flow. This no-conductance mode is known as the reverse-bias (or reverse-breakdown) mode. In the ES2AA R3G, the dotted line (arrow 2) indicates the diode’s reverse current capacity, a full 40V of safe protection from reverse voltage spikes.In addition to its two main operating modes of forward and reverse bias, the ES2AA R3G also provides additional features to improve its performance and protect the device from over-current and power dissipation events. At typical forward-bias conditions (e.g. I f = 5mA, V F = 0.5V @V R = 10V), the internal breakdown voltage is 40V. This means that over-current effects due to thermal runaway are eliminated and thermal stress is minimized. Additionally, the ES2AA R3G has a total power dissipation of 1W, extending the life of the device and making it suitable for applications with a wide voltage range.ConclusionIn summary, the ES2AA R3G is a fast, ultra-sensitive rectifier diode and is widely used across industries for applications that require voltage switching, rectification, signal sensing, and protection. The ES2AA R3G rectifier diode offers a unique ability to handle both AC and DC devices, and its low forward voltage allows it to be used in devices with limited power supply. Its low reverse current and high-voltage breakdown makes it an excellent choice for applications in replacing traditional rectifier diode designs. Finally, its total power dissipation of 1W ensures its longevity and makes it a reliable option for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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ES2AA-13-F | Diodes Incor... | -- | 55000 | DIODE GEN PURP 50V 2A SMA... |
ES2A-E3/52T | Vishay Semic... | 0.15 $ | 750 | DIODE GEN PURP 50V 2A DO2... |
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ES2AHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-LTP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-E3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A | ON Semicondu... | -- | 3000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHR3G | Taiwan Semic... | 0.08 $ | 3600 | DIODE GEN PURP 50V 2A DO2... |
ES2A M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMA... |
ES2AHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
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