| Allicdata Part #: | ES2A-M3/5BT-ND |
| Manufacturer Part#: |
ES2A-M3/5BT |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 50V 2A DO214AA |
| More Detail: | Diode Standard 50V 2A Surface Mount DO-214AA (SMB) |
| DataSheet: |  ES2A-M3/5BT Datasheet/PDF |
| Quantity: | 1000 |
| 12800 +: | $ 0.08019 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 30ns |
| Current - Reverse Leakage @ Vr: | 10µA @ 50V |
| Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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<html><head> <title>ES2A-M3/5BT</title> <meta name="category" content="Diodes - Rectifiers - Single" /></head><body><h2>ES2A-M3/5BT Application Field and Working Principle</h2><p>The ES2A-M3/5BT is one of the fastest and most reliable rectifiers available today. It is a high power single diode that can be used in a wide range of applications such as power conversion, motor control, energy storage and industrial control. The ES2A-M3/5BT diode has characteristics which allow it to cope with the demands of modern power systems. It also offers superior performance when used for rectifying rapid changes in load current.</p><h4>Applications</h4><p>The ES2A-M3/5BT diode has properties which make it suitable for use in a variety of power systems including high power rectification, power conversion, motor control, energy storage and industrial control. It is able to accept very high voltages, up to 5,000 volts while still operating efficiently at lower voltages. It can also operate at low currents, allowing it to be used in low power applications as well.</p><p>This diode is capable of handling very high frequency AC and DC signals. It has a low power loss capacity which makes it suitable for power applications where efficiency is a must. It is also very reliable and has a high current carrying capacity which makes it suitable for applications that require frequent switching of loads.</p><p>It is extremely versatile and can be used for a wide range of applications such as high power rectification, motor control, energy storage and industrial control. Its low power loss capacity allows it to be used in a wide range of power systems in order to achieve energy efficiency.</p><h4>Working Principle</h4><p>The ES2A-M3/5BT diode has two distinct operation modes. In forward biased operation, the diode behaves like a resistor, allowing current to flow only in one direction. In reverse biased operation, the diode acts like a switch, allowing any voltage below its breakdown voltage to be switched off.</p><p>When the diode is forward biased, electrons are injected into the semiconductor material by the applied voltage. This creates an electric field which acts to “pull” the electrons into the opposite direction. This is known as the “depletion layer” and is responsible for the resistance that is observed when an AC voltage is applied to the diode.</p><p>In reverse biased operation, the diode is acting as a switch. A small potential is applied to the diode and if the voltage is below the breakdown voltage, the diode will remain in the OFF state. If the voltage exceeds the breakdown voltage, the diode will be switched ON and current will flow through it.</p><p>The ES2A-M3/5BT diode is an ideal choice for use in power conversion, motor control, energy storage and industrial control applications. It is fast, reliable and efficient and can handle very high frequency AC and DC signals. Its properties make it a highly adaptable and efficient rectifier for a variety of different applications.</p></body></html>
The specific data is subject to PDF, and the above content is for reference
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| ES2A-E3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2AHM3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2AHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2A | ON Semicondu... | -- | 3000 | DIODE GEN PURP 50V 2A DO2... |
| ES2A-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2AAHR3G | Taiwan Semic... | 0.08 $ | 3600 | DIODE GEN PURP 50V 2A DO2... |
| ES2A M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2A-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2AA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMA... |
| ES2AHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 2A SMB... |
| ES2AHE3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 2A DO2... |
| ES2A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMB... |
| ES2AHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
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